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System Memory
Possible Chip Select usage:
Synchronous SRAM Memory Bank
Synchronous FLASH Memory Bank
10/100T / LCD Port
MPC564 Internal Flash
ory map of chip selects
Table 1-1 shows the MPC564EVB memory map.
Table 1-1. The MPC564EVB Default Memory Map
Address Range
0x0000_0000 - 0x0007_FFFF
0x0008_0000 - 0x002F_7FFF
0x002F_8000 - 0x002F_87FF
0x002F_8800 - 0x002F_9FFF
0x002F_A000 - 0x002F_BFFF
0x002F_C000 - 0x002F_FFFF
0x0030_0000 - 0x0030_7FFF
0x0030_8000 - 0x0037_FFFF
0x0038_0100 - 0x0038_00FF
0x0038_0100 - 0x0038_3FFF
0x0038_4000 - 0x003F_7FFF
0x003F_8000 - 0x003F_FFFF
0x0080_0000 - 0x00A0_0000
0x0100_0000 - 0x0108_0000
0xFFF0_0000 - 0xFFF8_0000
1.2.5.1
Memory Device / Bank Selection and Configuration.
The MPC564EVB board has two internal memory banks, two external memory banks and a
Peripheral memory bank that provide:
•
Internal SRAM
•
MPC564 512K byte Internal FLASH Memory (U1)
•
128K x 32bit (512KByte) Synchronous Static RAM (U2), 1M Byte with U3 option.
•
512K x 32bit (2MByte) Synchronous Flash EEPROM (U4)
•
Peripherals 10/100T Ethernet and LCD Port
Each external RAM or Flash memory bank can be configured individually to operate from the
MPC564 chip selects. Caution should be used not to place more than one memory bank on the CS0
chip select and to properly configure the chip select to control the memory devices provided in the
memory bank correctly. Failure to observe precautions may render the external memory bus
1-6
PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE
CS0 or CS1
CS0 or CS2
CS3
N/A
Signal and Device
512KByte UC3F Flash
Reserved for Flash (2,605 KBytes)
BBC DECRAM 2 KBytes
Reserved for BBC
BBC Control
USIU & Flash Control
UIMB I/F & IMB Modules 32KBytes
Reserved for IMB
CALRAM/READI Control 256 bytes
Reserved (L-bus Control) ~32KBytes
Reserved (L-bus Memory) 464 KBytes
CALRAM (internal SRAM) 32KBytes
External Flash 2MByte (0x0090_0000 -
0x00A0_0000 reserved for dBUG)
Ethernet
External SRAM 512KByte
MPC564EVB User's Manual
default CS1, MAP SW. 1,2
default CS0, MAP SW. 3,4
default CS3, MAP SW. 6,7
MAP_SW. 8, may effect mem-
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