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ADSP-2181–SPECIFICATIONS
RECOMMENDED OPERATING CONDITIONS
Parameter
V
Supply Voltage
DD
T
Ambient Operating Temperature
AMB
ELECTRICAL CHARACTERISTICS
Parameter
V
Hi-Level Input Voltage
IH
V
Hi-Level CLKIN Voltage
IH
V
Lo-Level Input Voltage
IL
V
Hi-Level Output Voltage
OH
V
Lo-Level Output Voltage
OL
I
Hi-Level Input Current
IH
I
Lo-Level Input Current
IL
I
Three-State Leakage Current
OZH
I
Three-State Leakage Current
OZL
I
Supply Current (Idle)
DD
I
Supply Current (Dynamic)
DD
C
Input Pin Capacitance
I
C
Output Pin Capacitance
O
NOTES
1
Bidirectional pins: D0–D23, RFS0, RFS1, SCLK0, SCLK1, TFS0, TFS1, IAD0–IAD15, PF0–PF7.
2
Input only pins: RESET, IRQ2, BR, MMAP, DR0, DR1, PWD, IRQL0, IRQL1, IRQE, IS, IRD, IWR, IAL.
3
Input only pins: CLKIN, RESET, IRQ2, BR, MMAP, DR0, DR1, IS, IAL, IRD, IWR, IRQL0, IRQL1, IRQE, PWD.
4
Output pins: BG, PMS, DMS, BMS, IOMS, CMS, RD, WR, IACK, PWDACK, A0–A13, DT0, DT1, CLKOUT, FL2-0.
5
Although specified for TTL outputs, all ADSP-2181 outputs are CMOS-compatible and will drive to V
6
Guaranteed but not tested.
7
Three-statable pins: A0–A13, D0-D23, PMS, DMS, BMS, IOMS, CMS, RD, WR, DT0, DT1, SCLK0, SCLK1, TFS0, TFS1, RFS0, RSF1, IAD0–IAD15, PF0–PF7.
8
0 V on BR, CLKIN Active (to force three-state condition).
9
Idle refers to ADSP-2181 state of operation during execution of IDLE instruction. Deasserted pins are driven to either V
10
Current reflects device operating with no output loads.
11
I
measurement taken with all instructions executing from internal memory. 50% of the instructions are multifunction (types 1, 4, 5, 12, 13, 14), 30% are type 2
DD
and type 6, and 20% are idle instructions.
12
V
= 0.4 V and 2.4 V. For typical figures for supply currents, refer to "Power Dissipation" section.
IN
13
Applies to TQFP and PQFP package types.
14
Output pin capacitance is the capacitive load for any three-stated output pin.
Specifications subject to change without notice.
Min
4.5
0
Test Conditions
1, 2
@ V
= max
DD
@ V
= max
DD
1, 3
@ V
= min
DD
1, 4, 5
@ V
= min
DD
I
= –0.5 mA
OH
@ V
= min
DD
I
= –100 A
OH
1, 4, 5
@ V
= min
DD
I
= 2 mA
OL
3
@ V
= max
DD
V
= V
IN
DD
3
@ V
= max
DD
V
= 0 V
IN
7
@ V
= max,
DD
V
= V
IN
DD
7
@ V
= max,
DD
8
V
= 0 V
IN
9, 10
@ V
= max
DD
10, 11
@ V
= max
DD
t
= 30 ns
CK
3, 6, 13
@ V
= 2.5 V,
IN
f
= 1.0 MHz,
IN
T
= +25 C
AMB
6, 7, 13, 14
@ V
= 2.5 V,
IN
f
= 1.0 MHz,
IN
T
= +25 C
AMB
–12–
K Grade
Max
Min
5.5
4.5
+70
–40
K/B Grades
Min
2.0
2.2
2.4
6
V
– 0.3
DD
max
8
max
12
and GND, assuming no dc loads.
DD
DD
B Grade
Max
Unit
5.5
V
+85
Max
Unit
V
V
0.8
V
V
V
0.4
V
10
10
10
10
16.5
mA
100
mA
8
pF
8
pF
or GND.
REV. 0
C
A
A
A
A
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