Agtl+ Signal Group Dc Specifications; Cmos Signal Group Dc Specifications - Intel RH80536GC0332M - Pentium M 1.8 GHz Processor Datasheet

Table 3-23. AGTL+ Signal Group DC Specifications
Symbol
VCCP
GTLREF
V
IH
V
IL
V
OH
R
TT
R
ON
I
LI
Cpad
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. V is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low value.
IL
3. V is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high
IH
value.
4. V and V
IH
signal quality specifications in
5. This is the pull down driver resistance. Refer to processor I/O buffer models for I/V characteristics. Measured
at 0.31*VCCP. R
6. GTLREF should be generated from VCCP with a 1% tolerance resistor divider. The VCCP referred to in these
specifications is the instantaneous VCCP.
7. R is the on-die termination resistance measured at V
TT
0.31*VCCP. R
8. Specified with on die R
9. Cpad includes die capacitance only. No package parasitics are included.
Table 3-24. CMOS Signal Group DC Specifications
Symbol
VCCP
V
IL
V
IH
V
OL
V
OH
I
OL
I
OH
I
LI
Cpad
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. The VCCP referred to in these specifications refers to instantaneous VCCP.
3. Refer to the processor I/O buffer models for I/V characteristics.
4. Measured at 0.1*VCCP.
5. Measured at 0.9*VCCP.
6. For Vin between 0 V and VCCP. Measured when the driver is tristated.
7. Cpad includes die capacitance only. No package parasitics are included
Datasheet
Parameter
I/O Voltage
Reference Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Termination Resistance
Buffer On Resistance
Input Leakage Current
Pad Capacitance
may experience excursions above VCCP. However, input signal drivers must comply with the
OH
Chapter
(min) = 0.38*R R
ON ,
TT
is connected to VCCP on die. Refer to processor I/O buffer models for I/V characteristics.
TT
and R are turned off.
TT ON
Parameter
I/O Voltage
Input Low Voltage
CMOS
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Current
Output High Current
Leakage Current
Pad Capacitance
Min Typ
0.997 1.05
2/3 VCCP - 2/3 VCCP
2%
GTLREF+0.1
-0.1
VCCP
47 55
17.7 24.7
1.8 2.3
3.
(typ) = 0.45*R R (max) = 0.52*R
ON , ON
TT
of the AGTL+ output driver. Measured at
OL
Min Typ
0.997 1.05
-0.1
0.7*VCCP
-0.1 0
0.9*VCCP VCCP
1.49
1.49
1.0 2.3
Electrical Specifications
Max Unit Notes
1.102 V
2/3 VCCP + V 6
2%
VCCP+0.1 V 3,6
GTLREF-0.1 V 2,4
6
Ω
63 7
Ω
32.9 5
± 100 µA 8
2.75 pF 9
.
TT
Max Unit Notes
1.102 V
0.3*VCCP V 2, 3
VCCP+0.1 V 2
0.1*VCCP V 2
VCCP+0.1 V 2
4.08 mA 4
4.08 mA 5
± 100 µA 6
3.0 pF
1
1
45