Cypress Semiconductor CY7C1364C Specification Sheet

9-mbit (256k x 32) pipelined sync sram

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Features
• Registered inputs and outputs for pipelined operation
• 256K × 32 common I/O architecture
• 3.3V core power supply (V
• 2.5V/3.3V I/O power supply (V
• Fast clock-to-output times
— 2.8 ns (for 250-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel
®
Pentium
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Available in JEDEC-standard lead-free 100-Pin TQFP
package
• TQFP Available with 3-Chip Enable and 2-Chip Enable
• "ZZ" Sleep Mode Option
Logic Block Diagram-CY7C1364C (256K x 32)
A0, A1, A
MODE
ADV
CLK
ADSC
ADSP
BW
D
WRITE REGISTER
BW
C
WRITE REGISTER
BW
B
WRITE REGISTER
BW
A
WRITE REGISTER
BWE
GW
CE
1
CE
2
CE
3
OE
SLEEP
ZZ
CONTROL
Notes:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
2. CE
is not available on 2 Chip Enable TQFP package.
3
Cypress Semiconductor Corporation
Document #: 38-05689 Rev. *E
9-Mbit (256K x 32) Pipelined Sync SRAM
)
DD
)
DDQ
®
ADDRESS
REGISTER
2
A
[1:0]
Q1
BURST
COUNTER
AND
CLR
Q0
LOGIC
DQ
D
BYTE
DQ
C
BYTE
DQ
B
BYTE
DQ
A
BYTE
ENABLE
PIPELINED
REGISTER
ENABLE
198 Champion Court
Functional Description
The CY7C1364C SRAM integrates 256K x 32 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
), depth-expansion Chip Enables (CE
1
Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW
, and BWE), and Global Write (GW). Asynchronous
[A:D]
inputs include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the Byte Write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1364C operates from a +3.3V core power supply
while all outputs may operate with either a +2.5 or +3.3V
supply. All inputs and
JESD8-5-compatible.
DQ
D
BYTE
WRITE DRIVER
DQ
C
BYTE
WRITE DRIVER
MEMORY
SENSE
ARRAY
AMPS
DQ
B
BYTE
WRITE DRIVER
DQ
A
BYTE
WRITE DRIVER
,
San Jose
CA 95134-1709
CY7C1364C
[1]
[2]
and CE
), Burst
2
3
outputs
are
JEDEC-standard
OUTPUT
OUTPUT
D Q s
BUFFERS
REGISTERS
E
INPUT
REGISTERS
408-943-2600
Revised September 14, 2006
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Summary of Contents for Cypress Semiconductor CY7C1364C

  • Page 1 Document #: 38-05689 Rev. *E 9-Mbit (256K x 32) Pipelined Sync SRAM Functional Description The CY7C1364C SRAM integrates 256K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK).
  • Page 2 Maximum CMOS Standby Current Pin Configuration 100-Pin TQFP Pinout (2 Chip Enables) (AJ version) BYTE C BYTE D Document #: 38-05689 Rev. *E 250 MHz 200 MHz CY7C1364C CY7C1364C 166 MHz Unit BYTE B BYTE A Page 2 of 18 [+] Feedback...
  • Page 3: Pin Configuration

    Pin Configuration (continued) 100-Pin TQFP Pinout (3 Chip Enables) (A version) BYTE C BYTE D Document #: 38-05689 Rev. *E CY7C1364C CY7C1364C BYTE B BYTE A Page 3 of 18 [+] Feedback...
  • Page 4: Pin Definitions

    OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQ are placed in a tri-state condition. Power Supply Power supply inputs to the core of the device. Ground Ground for the core of the device. CY7C1364C Description feed the 2-bit counter. [1:0] and BWE).
  • Page 5: Functional Overview

    ) inputs. A Global Write has been provided to simplify the Write operations. Because the CY7C1364C is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ inputs. Doing so will tri-state the output drivers. As...
  • Page 6 Burst Sequences The CY7C1364C provides a two-bit wraparound counter, fed by A , that implements either an interleaved or linear burst [1:0] sequence. The interleaved burst sequence is designed specif- ically to support Intel Pentium applications. The linear burst sequence is designed to support processors that follow a linear burst sequence.
  • Page 7: Truth Table

    OE is active (LOW). Document #: 38-05689 Rev. *E ADSP ADSC ) and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals CY7C1364C Write Tri-State Tri-State Tri-State...
  • Page 8 Write Bytes D, B Write Bytes D, B, A Write Bytes D, C Write Bytes D, C, A Write Bytes D, C, B Write All Bytes Write All Bytes Document #: 38-05689 Rev. *E CY7C1364C Page 8 of 18 [+] Feedback...
  • Page 9: Maximum Ratings

    V f = 0 /2), undershoot: V (AC) > –2V (Pulse width less than t (min.) within 200 ms. During this time V < V CY7C1364C + 0.5V Ambient Temperature 0°C to +70°C 3.3V – 2.5V – 5% to 5%/+10% –40°C to +85°C...
  • Page 10 R = 351Ω INCLUDING JIG AND SCOPE R = 1667Ω 2.5V OUTPUT 5 pF R =1538Ω INCLUDING JIG AND SCOPE CY7C1364C 100 TQFP Max. = 3.3V = 2.5V 100 TQFP Package Unit °C/W 29.41 °C/W 6.13 ALL INPUT PULSES ≤ 1 ns ≤...
  • Page 11: Switching Characteristics

    1.25 = 2.5V. is the time that the power needs to be supplied above V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CY7C1364C –200 –166 Max. Min. Max. Unit 1.25 1.25...
  • Page 12: Switching Waveforms

    OELZ t DOH Q(A2) Q(A2 + 1) Q(A2 + 2) Q(A1) is HIGH and CE is LOW. When CE is HIGH, CE CY7C1364C Burst continued with new base address Deselect cycle t CHZ Q(A2 + 3) Q(A2) Q(A2 + 1)
  • Page 13 ADV suspends burst D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) BURST WRITE DON’T CARE UNDEFINED LOW. [A:D] CY7C1364C ADSC extends burst t ADS t ADH t WES t WEH ADVS ADVH D(A2 + 3) D(A3) D(A3 + 1)
  • Page 14 Document #: 38-05689 Rev. *E t WES t WEH t DS t DH t OELZ D(A3) t OEHZ Q(A2) Q(A4) Single WRITE DON’T CARE UNDEFINED CY7C1364C D(A5) D(A6) Q(A4+1) Q(A4+2) Q(A4+3) BURST READ Back-to-Back WRITEs Page 14 of 18 [+] Feedback...
  • Page 15 22. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 23. DQs are in High-Z when exiting ZZ sleep mode. Document #: 38-05689 Rev. *E ZZREC t RZZI DESELECT or READ Only High-Z DON’T CARE CY7C1364C Page 15 of 18 [+] Feedback...
  • Page 16: Ordering Information

    Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit Speed Package (MHz) Ordering Code Diagram CY7C1364C-166AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1364C-166AJXC CY7C1364C-166AXI CY7C1364C-166AJXI CY7C1364C-200AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free...
  • Page 17: Package Diagram

    2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS CY7C1364C 1.40±0.05 12°±1° SEE DETAIL (8X) 0.20 MAX.
  • Page 18 Document History Page Document Title: CY7C1364C 9-Mbit (256K x 32) Pipelined Sync SRAM Document Number: 38-05689 REV. ECN NO. Issue Date 286269 See ECN 320834 See ECN 377095 See ECN 408725 See ECN 429278 See ECN 501828 See ECN Document #: 38-05689 Rev. *E Orig.

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