Cypress Semiconductor CY7C1345G Specification Sheet

4-mbit (128k x 36) flow through sync sram

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Features
128K x 36 common IO
3.3V core power supply (V
2.5V or 3.3V IO supply (V
Fast clock-to-output times
6.5 ns (133 MHz version)
Provide high performance 2-1-1-1 access rate
User selectable burst counter supporting Intel Pentium inter-
leaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
Available in Pb-free 100-Pin TQFP package, Pb-free and
non-Pb-free 119-Ball BGA package
ZZ Sleep Mode option
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum Standby Current
Cypress Semiconductor Corporation
Document Number: 38-05517 Rev. *E
4-Mbit (128K x 36) Flow Through Sync SRAM
)
DD
)
DDQ
Parameter
198 Champion Court

Functional Description

The CY7C1345G is a 128K x 36 synchronous cache RAM
designed to interface with high speed microprocessors with
minimum glue logic. The maximum access delay from clock rise
is 6.5 ns (133 MHz version). A two-bit on-chip counter captures
the first address in a burst and increments the address automat-
ically for the rest of the burst access. All synchronous inputs are
gated by registers controlled by a positive edge triggered Clock
Input (CLK). The synchronous inputs include all addresses, all
data inputs, address pipelining Chip Enable (CE
expansion Chip Enables (CE
(ADSC, ADSP, and ADV), Write Enables ( BW
Global Write (GW). Asynchronous inputs include the Output
Enable (OE) and the ZZ pin.
The CY7C1345G enables either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects an
interleaved burst sequence, while a LOW selects a linear burst
sequence. Burst accesses are initiated with the Processor
Address Strobe (ADSP) or the cache Controller Address Strobe
(ADSC) inputs.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or Address
Strobe Controller ( ADSC ) is active. Subsequent burst addresses
are internally generated as controlled by the Advance pin (ADV).
The CY7C1345G operates from a +3.3V core power supply
while all outputs operate with either a +2.5 or +3.3V supply. All
inputs and outputs are JEDEC standard JESD8-5 compatible.
For best practice recommendations, refer to the Cypress appli-
cation note
AN1064, SRAM System
133 MHz
6.5
225
40
,
San Jose
CA 95134-1709
CY7C1345G
), depth
1
and CE
), Burst Control inputs
2
3
, and BWE), and
x
Guidelines.
100 MHz
Unit
8.0
ns
205
mA
40
mA
408-943-2600
Revised July 15, 2007

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Summary of Contents for Cypress Semiconductor CY7C1345G

  • Page 1: Functional Description

    Document Number: 38-05517 Rev. *E 4-Mbit (128K x 36) Flow Through Sync SRAM Functional Description The CY7C1345G is a 128K x 36 synchronous cache RAM designed to interface with high speed microprocessors with minimum glue logic. The maximum access delay from clock rise is 6.5 ns (133 MHz version).
  • Page 2: Logic Block Diagram

    Document Number: 38-05517 Rev. *E ADDRESS REGISTER [1:0] BURST COUNTER AND LOGIC BYTE WRITE REGISTER BYTE WRITE REGISTER BYTE WRITE REGISTER BYTE WRITE REGISTER ENABLE REGISTER CY7C1345G OUTPUT MEMORY SENSE BUFFERS ARRAY AMPS INPUT REGISTERS DQ s Page 2 of 20...
  • Page 3: Pin Configurations

    Pin Configurations BYTE C BYTE D Document Number: 38-05517 Rev. *E 100-Pin TQFP Pinout CY7C1345G CY7C1345G BYTE B BYTE A Page 3 of 20...
  • Page 4 Pin Configurations (continued) NC/288M NC/144M Document Number: 38-05517 Rev. *E 119-Ball BGA Pinout ADSP ADSC MODE NC/72M CY7C1345G NC/576M NC/1G NC/36M Page 4 of 20...
  • Page 5: Pin Definitions

    ADSP is ignored if CE to select or deselect the device. CE to select or deselect the device. CE is deasserted HIGH. are placed in a tri-state condition. CY7C1345G , CE , and CE are sampled active. A and BWE).
  • Page 6: Functional Overview

    Maximum access delay from the clock rise (t ) is 6.5 ns (133 MHz device). The CY7C1345G supports secondary cache in systems using either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486™ processors. The linear burst sequence is suited for processors that use a linear burst sequence.
  • Page 7 Burst Sequences The CY7C1345G provides an on-chip two-bit wrap around burst counter inside the SRAM. The burst counter is fed by A follows either a linear or interleaved burst order. The burst order is determined by the state of the MODE input. A LOW on MODE selects a linear burst sequence.
  • Page 8: Truth Table

    Truth Table The truth table for CY7C1345G follows. Address Cycle Description Used Deselected Cycle, Power None down Deselected Cycle, Power None down Deselected Cycle, Power None down Deselected Cycle, Power None down Deselected Cycle, Power None down Sleep Mode, Power down...
  • Page 9 6. This table is only a partial listing of the byte write combinations. Any combination of BW Document Number: 38-05517 Rev. *E [1, 6] is valid. Appropriate write is done based on the active byte write. CY7C1345G Page 9 of 20...
  • Page 10: Maximum Ratings

    – 0.3V or V f = 0, inputs static /2), undershoot: V (AC) > –2V (Pulse width less than t (min) within 200 ms. During this time V < V CY7C1345G Ambient Temperature 0°C to +70°C 3.3V −5%/+10% –40°C to +85°C 3.135...
  • Page 11: Thermal Resistance

    R = 351Ω INCLUDING JIG AND SCOPE R = 1667Ω 2.5V OUTPUT 5 pF R = 1538Ω INCLUDING JIG AND SCOPE CY7C1345G 119 BGA 100 TQFP 100 TQFP 119 BGA Package Package 30.32 34.1 6.85 14.0 ALL INPUT PULSES ≤ 1ns ALL INPUT PULSES ≤...
  • Page 12: Switching Characteristics

    V and t is less than t to eliminate bus contention between SRAMs when sharing the same data bus. OELZ CY7C1345G –133 –100 (minimum) initially before a read or write operation is Page 12 of 20...
  • Page 13: Timing Diagrams

    DOH Q(A2) Q(A2 + 1) Q(A2 + 2) DON’T CARE is HIGH and CE is LOW. When CE is HIGH: CE CY7C1345G Deselect Cycle Q(A2 + 3) Q(A2) Q(A2 + 1) Burst wraps around to its initial state BURST...
  • Page 14 ADH ADV suspends burst D(A2) D(A2 + 1) D(A2 + 1) BURST WRITE DON’T CARE UNDEFINED LOW. CY7C1345G ADSC extends burst t ADS t ADH t WES t WEH t ADVS t ADVH D(A2 + 2) D(A2 + 3)
  • Page 15 Document Number: 38-05517 Rev. *E [16, 17, 18] Figure 3. Read/Write Timing t DS t DH t OELZ D(A3) OEHZ t CDV Q(A4) Single WRITE DON’T CARE UNDEFINED CY7C1345G D(A5) Q(A4+1) Q(A4+2) Q(A4+3) BURST READ Back-to-Back WRITEs Page 15 of 20 D(A6)
  • Page 16 Figure 4. ZZ Mode Timing t ZZ t ZZI DDZZ High-Z DON’T CARE “Truth Table” on page 8 for all possible signal conditions to deselect the device. CY7C1345G t ZZREC t RZZI DESELECT or READ Only Page 16 of 20...
  • Page 17: Ordering Information

    Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) Ordering Code CY7C1345G-133AXC CY7C1345G-133BGC CY7C1345G-133BGXC CY7C1345G-133AXI CY7C1345G-133BGI CY7C1345G-133BGXI CY7C1345G-100AXC CY7C1345G-100BGC CY7C1345G-100BGXC CY7C1345G-100AXI...
  • Page 18: Package Diagrams

    NOTE: 0.15 MAX. 1. JEDEC STD REF MS-026 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH R 0.08 MIN. 0.20 MAX. 3. DIMENSIONS IN MILLIMETERS DETAIL CY7C1345G 1.40±0.05 12°±1° SEE DETAIL (8X) 0.20 MAX. 1.60 MAX. SEATING PLANE MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE...
  • Page 19 A1 CORNER 0.70 REF. 12.00 30° TYP. SEATING PLANE Document Number: 38-05517 Rev. *E Figure 6. 119-Ball BGA (14 x 22 x 2.4 mm), 51-85115 Ø1.00(3X) REF. CY7C1345G Ø0.05 M C Ø0.25 M C A B Ø0.75±0.15(119X) 1.27 3.81 7.62 14.00±0.20 0.15(4X)
  • Page 20 Document History Page Document Title: CY7C1345G, 4-Mbit (128K x 36) Flow Through Sync SRAM Document Number: 38-05517 REV. ECN NO. Issue Date 224365 See ECN 278513 See ECN 333626 See ECN 418633 See ECN 480124 See ECN 1274724 See ECN ©...

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