Cypress Semiconductor CY7C1336H Specification Sheet

Cypress 2-mbit (64k x 32) flow-through sync sram specification sheet

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Features
• 64K x 32 common I/O
• 3.3V core power supply
• 3.3V I/O supply
• Fast clock-to-output times
— 6.5 ns (133-MHz version)
— 8.0 ns (100-MHz version)
• Provide high-performance 2-1-1-1 access rate
• User-selectable burst counter supporting Intel
®
Pentium
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Supports 3.3V I/O level
• Offered in JEDEC-standard lead-free 100-pin TQFP
package
• "ZZ" Sleep Mode option
Logic Block Diagram
A0, A1, A
MODE
ADV
CLK
ADSC
ADSP
BW
D
BW
C
BW
B
BW
A
BWE
GW
CE1
CE2
CE3
OE
SLEEP
ZZ
CONTROL
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 001-00210 Rev. *A
PRELIMINARY
2-Mbit (64K x 32) Flow-Through Sync SRAM
®
ADDRESS
REGISTER
A
[1:0]
Q1
BURST
COUNTER
AND LOGIC
Q0
CLR
DQ
D
BYTE
BYTE
WRITE REGISTER
WRITE REGISTER
DQ
C
BYTE
WRITE REGISTER
DQ
B
BYTE
WRITE REGISTER
DQ
A
BYTE
WRITE REGISTER
ENABLE
REGISTER
198 Champion Court
Functional Description
The CY7C1336H is a 64K x 32 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
), depth-expansion Chip Enables (CE
1
Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW
, and BWE), and Global Write (GW). Asynchronous
[A:D]
inputs include the Output Enable (OE) and the ZZ pin.
The CY7C1336H allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects
an interleaved burst sequence, while a LOW selects a linear
burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP) or the cache Controller
Address Strobe (ADSC) inputs. Address advancement is
controlled by the Address Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1336H operates from a +3.3V core power supply
while all outputs may operate with a +3.3V supply. All inputs
and outputs are JEDEC-standard JESD8-5-compatible.
DQ
D
BYTE
WRITE REGISTER
DQ
C
BYTE
WRITE REGISTER
MEMORY
ARRAY
DQ
B
BYTE
WRITE REGISTER
DQ
A
BYTE
WRITE REGISTER
,
San Jose
CA 95134-1709
CY7C1336H
[1]
and CE
), Burst
2
3
OUTPUT
DQs
SENSE
BUFFERS
AMPS
INPUT
REGISTERS
408-943-2600
Revised February 6, 2006
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Summary of Contents for Cypress Semiconductor CY7C1336H

  • Page 1 PRELIMINARY 2-Mbit (64K x 32) Flow-Through Sync SRAM Functional Description The CY7C1336H is a 64K x 32 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automati- cally for the rest of the burst access.
  • Page 2 Maximum Access Time Maximum Operating Current Maximum Standby Current Pin Configuration BYTE C BYTE D Document #: 001-00210 Rev. *A PRELIMINARY 133 MHz 100 MHz 100-pin TQFP Pinout CY7C1336H CY7C1336H Unit BYTE B BYTE A Page 2 of 15 [+] Feedback...
  • Page 3: Pin Definitions

    , CE , and CE is sampled only when a new external address is loaded. is sampled only when a new external address is loaded. is deasserted HIGH CY7C1336H are sampled active. A feed the 2-bit [1:0] and BWE). [A:D] is HIGH.
  • Page 4: Functional Overview

    Maximum access delay from the clock rise (t ) is 6.5 ns (133-MHz device). The CY7C1336H supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486™...
  • Page 5: Truth Table

    This parameter is sampled ADSP ADSC , BW , BW , BW ) and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals CY7C1336H Min. Max. Unit ADV WRITE OE CLK Tri-State Tri-State...
  • Page 6 , DQP Write Bytes (D, B, A, DQP , DQP , DQP Write Bytes (D, C, A, DQP , DQP , DQP Write All Bytes Write All Bytes Document #: 001-00210 Rev. *A PRELIMINARY CY7C1336H Page 6 of 15 [+] Feedback...
  • Page 7: Maximum Ratings

    – 0.3V or V f = 0, inputs static /2), undershoot: V (AC) > –2V (Pulse width less than t (min.) within 200 ms. During this time V < V and V CY7C1336H Ambient 0°C to +70°C 3.3V 3.3V –5% −5%/+10% to V Min.
  • Page 8 Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51 R = 317Ω 3.3V OUTPUT 5 pF R = 351Ω INCLUDING JIG AND SCOPE CY7C1336H 100 TQFP Max. Unit = 3.3V 100 TQFP Package Unit °C/W 30.32 °C/W 6.85 ALL INPUT PULSES ≤...
  • Page 9: Switching Characteristics

    [13, 14, 15] is the time that the power needs to be supplied above V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CY7C1336H 100 MHz Max. Min. Max. Unit (minimum) initially before a Read or Write operation...
  • Page 10: Timing Diagrams

    Q(A2 + 1) Q(A2 + 2) BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH, CE CY7C1336H Deselect Cycle t CHZ Q(A2 + 3) Q(A2) Q(A2 + 1) Q(A2 + 2) Burst wraps around...
  • Page 11 ADV suspends burst. D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) BURST WRITE DON’T CARE UNDEFINED LOW. [A:D] CY7C1336H t ADS t ADH t WES t WEH t ADVS t ADVH D(A2 + 3) D(A3) D(A3 + 1)
  • Page 12 19. GW is HIGH. Document #: 001-00210 Rev. *A PRELIMINARY t DS t DH t OELZ D(A3) t CDV Q(A4) Q(A4+1) Single WRITE BURST READ DON’T CARE UNDEFINED CY7C1336H D(A5) D(A6) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page 12 of 15 [+] Feedback...
  • Page 13 20. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 21. DQs are in High-Z when exiting ZZ sleep mode. Document #: 001-00210 Rev. *A PRELIMINARY High-Z DON’T CARE CY7C1336H ZZREC t RZZI DESELECT or READ Only Page 13 of 15 [+] Feedback...
  • Page 14: Ordering Information

    Ordering Information Speed Package (MHz) Ordering Code Diagram CY7C1336H-133AXC 51-85050 CY7C1336H-133AXI 51-85050 CY7C1336H-100AXC 51-85050 CY7C1336H-100AXI 51-85050 Please contact your local Cypress sales representative for availability of these parts. Package Diagram 100-pin TQFP (14 x 20 x 1.4 mm) (51-85050) R 0.08 MIN.
  • Page 15 Document History Page Document Title: CY7C1336H 2-Mbit (64K x 32) Flow-Through Sync SRAM Document Number: 001-00210 REV. ECN NO. Issue Date 347377 See ECN 428408 See ECN Document #: 001-00210 Rev. *A PRELIMINARY Orig. of Change Description of Change New Data Sheet Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street”...

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