Cypress Semiconductor CY7C1365C Specification Sheet

Cypress 9-mbit (256k x 32) flow-through sync sram specification sheet

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Features
• 256K x 32 common I/O
• 3.3V core power supply (V
• 2.5V/3.3V I/O power supply (V
• Fast clock-to-output times
— 6.5 ns (133-MHz version)
• Provide high-performance 2-1-1-1 access rate
• User-selectable burst counter supporting Intel
®
Pentium
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Supports 3.3V I/O level
• Available in JEDEC-standard lead-free 100-Pin TQFP
package
• TQFP Available with 3-Chip Enable and 2-Chip Enable
• "ZZ" Sleep Mode option
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum Standby Current
Notes:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
2. CE
is not available on 2 Chip Enable TQFP package.
3
Cypress Semiconductor Corporation
Document #: 38-05690 Rev. *E
9-Mbit (256K x 32) Flow-Through Sync SRAM
)
DD
)
DDQ
®
133 MHz
6.5
250
40
198 Champion Court
Functional Description
The CY7C1365C is a 256K x 32 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
), depth-expansion Chip Enables (CE
1
Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW[A:D], and BWE), and Global Write (GW). Asynchronous
inputs include the Output Enable (OE) and the ZZ pin .
The CY7C1365C allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects
an interleaved burst sequence, while a LOW selects a linear
burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP) or the cache Controller
Address Strobe (ADSC) inputs. Address advancement is
controlled by the Address Advancement (ADV) input.
Addresses and Chip Enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1365C operates from a +3.3V core power supply
while all outputs may operate with either a +2.5 or +3.3V
supply. All inputs and
outputs
JESD8-5-compatible.
100 MHz
8.5
180
40
,
San Jose
CA 95134-1709
CY7C1365C
[1]
[2]
and CE
), Burst
2
3
are
JEDEC-standard
Unit
ns
mA
mA
408-943-2600
Revised September 14, 2006
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Summary of Contents for Cypress Semiconductor CY7C1365C

  • Page 1 Cypress Semiconductor Corporation Document #: 38-05690 Rev. *E Functional Description The CY7C1365C is a 256K x 32 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automati- cally for the rest of the burst access.
  • Page 2 Logic Block Diagram-CY7C1365C (256K x 32) A0, A1, A MODE ADSC ADSP BYTE BYTE WRITE REGISTER WRITE REGISTER BYTE WRITE REGISTER BYTE WRITE REGISTER BYTE WRITE REGISTER ENABLE REGISTER SLEEP CONTROL Document #: 38-05690 Rev. *E ADDRESS REGISTER [1:0] BURST...
  • Page 3: Pin Configurations

    Pin Configurations 100-Pin TQFP Pinout (2 Chip Enable) (AJ version) BYTE C BYTE D Document #: 38-05690 Rev. *E CY7C1365C CY7C1365C BYTE B BYTE A Page 3 of 18 [+] Feedback...
  • Page 4 Pin Configurations (continued) 100-Pin TQFP Pinout (3 Chip Enable) (A version) BYTE C BYTE D Document #: 38-05690 Rev. *E CY7C1365C CY7C1365C BYTE B BYTE A Page 4 of 18 [+] Feedback...
  • Page 5: Pin Descriptions

    The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs are placed in a tri-state condition. CY7C1365C Description , and CE are sampled active. A...
  • Page 6 When tied to V sequence. This is a strap pin and should remain static during device operation. Mode Pin has an internal pull-up. No Connects. Not Internally connected to the die. CY7C1365C Description or left floating selects interleaved burst Page 6 of 18...
  • Page 7: Functional Overview

    Maximum access delay from the clock rise (t ) is 6.5 ns (133-MHz device). The CY7C1365C supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486 processors.
  • Page 8: Truth Table

    This parameter is sampled This parameter is sampled ADSP ADSC , BW , BW , BW ) and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals CY7C1365C Min. Max. Unit ADV WRITE Tri-State Tri-State Tri-State...
  • Page 9 , DQP Write Bytes (D, B, A, DQP , DQP , DQP Write Bytes (D, C, A, DQP , DQP , DQP Write All Bytes Write All Bytes Document #: 38-05690 Rev. *E CY7C1365C Page 9 of 18 [+] Feedback...
  • Page 10: Maximum Ratings

    , f = 0, inputs static. /2), undershoot: V (AC) > –2V (Pulse width less than t (min.) within 200 ms. During this time V < V and V CY7C1365C + 0.5V Ambient Temperature 0°C to +70°C 3.3V – 2.5V – 5% to 5%/+10% –40°C to +85°C...
  • Page 11 5 pF R = 351Ω INCLUDING JIG AND SCOPE R = 1667Ω 2.5V OUTPUT 5 pF R =1538Ω INCLUDING JIG AND SCOPE CY7C1365C 100 TQFP Max. Unit 100 TQFP Package Unit °C/W 29.41 °C/W 6.13 ALL INPUT PULSES ≤ 1 ns ≤...
  • Page 12: Switching Characteristics

    = 2.5V. is the time that the power needs to be supplied above V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CY7C1365C –100 Max. Min. Max. Unit (minimum) initially before a Read or Write operation...
  • Page 13: Timing Diagrams

    Q(A2 + 1) Q(A2 + 2) BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH, CE CY7C1365C Deselect Cycle t CHZ Q(A2 + 3) Q(A2) Q(A2 + 1) Q(A2 + 2) Burst wraps around...
  • Page 14 ADSC extends burst. ADV suspends burst. D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) BURST WRITE DON’T CARE UNDEFINED CY7C1365C t ADS t ADH t WES t WEH t ADVS t ADVH D(A2 + 3) D(A3) D(A3 + 1)
  • Page 15 20. GW is HIGH. Document #: 38-05690 Rev. *E t DS t DH t OELZ D(A3) t CDV Q(A4) Q(A4+1) Single WRITE BURST READ DON’T CARE UNDEFINED CY7C1365C D(A5) D(A6) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page 15 of 18 [+] Feedback...
  • Page 16: Ordering Information

    ALL INPUTS (except ZZ) Outputs (Q) Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit Speed (MHz) Ordering Code CY7C1365C-133AXC CY7C1365C-133AJXC CY7C1365C-133AXI CY7C1365C-133AJXI CY7C1365C-100AXC CY7C1365C-100AJXC CY7C1365C-100AXI CY7C1365C-100AJXI Notes: 21.
  • Page 17: Package Diagram

    2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS CY7C1365C 1.40±0.05 12°±1° SEE DETAIL (8X) 0.20 MAX.
  • Page 18 Document History Page Document Title: CY7C1365C 9-Mbit (256K x 32) Flow-Through Sync SRAM Document Number: 38-05690 REV. ECN NO. Issue Date 286269 See ECN 320834 See ECN 377095 See ECN 408725 See ECN 429278 See ECN 501828 See ECN Document #: 38-05690 Rev. *E Orig.

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