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262144-word x 4-bit CMOS Dynamic Random Access Memory
The Hitachi HM514256 Series
is
a CMOS dynamic RAM or.
ganized 262144-word x 4-bit. HM514256 has realized higher
density, higher performance and various functions by employing
1.3 prn CMOS process technology and some new CMOS circuit
design technologies. The HM514256 offers Page Mode as a high
speed access mode.
Multiplexed address input permits the HM514256 to
be
packaged in standard 20-pin plastic DIP, 2O.pin plastic
SOJ
and
2Bpin plastic ZIP.
Features
High Speed
.
.
.
.
.
Access Time 100/120/150 ns (max)
Lower Power
. . . .
Active
300
mW, Standby 11mW
Single 5V (210%)
Page
Mode
512refreshcyclc
. .
.
. .
. . . . . .
Ems
2 variations of refresh
. .
.
. .
.
.
,
RAS only refresh
CAS before
RAS
refresh
-
-
Ordering Information
- -
Type
No.
Access
Time
Package
-
HMS14256P-10
100
Iu
HMS14256P-12
120-
300 mil 2 0 *in
Plastic
DIP
~.
HMS14256P-lS
1
Sons
HMS14256ZP-10
lWns
HMS14256ZP-12
12011s
20 pin
Plastic
Z 1 P
HMS14256ZP-15
1 S On s
HMS142J6JP-10
1Wm
HM514256JP-12
1 2 0 1 1 s
20 pin
Plastic
S O J
HM514256JP-15
15Ons
--
Pin Arrangement
HMS142S6P
Series
(Top
View)
HM514256JP
Series
7
HMS14256ZP
Series
(Bottom
View)
352
@
HlTACHl
HMS14256P Series
(DP-2ONA)
HM514256ZP Series
(ZP-20)
HMS142S6JP
Series
(CP-2OD)
Pin Descriotion
A0
-
A S
Address
Inputs
CAS
Column
Address
Strobe
FE
Output
Enable
RAS
Row Address Strobe
WE
Rud/Write Input
Vcc
Power (+Sv)
1/0
-
1 / 0 4
Data
I n / I h t a
Out
.~
~~
vss
Ground
A 0
-
A 8
Refresh
Address
Input
Not01 Tho
&ciiicationr
of
this drvim
arm
v b j r a
to
chang.
without
n o t i a . P b o r
contact your
n u r r a
Higlchi'r
SIOI D o n . r e p d i n g
w c i i i e r t i o n r
-
I
1
i
I
t
i
J
i
i
i
,
4
!
-. .-
,
Block
Diaaram
Absolute Maximum Ratiw
Voltage on any pin relative
Operating temperature,,
Ta
Storage temperature (Ambl
Power dissipation
.
. .
,
,
.
Short circuit output curren
Recommended DC Operat!
S !
Parameler
Supply
voltage
Input Low
voltage
Input
High
voltage
,
Note) All
voltages
referenced
I
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