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.
....-
-
DC Electr;-al Characteristics
(Ta
= 0
to
+7OoC,
VCC
=
SV
f
10%.
Vss
O v '
Parameter
Symbol
Mi
Max
bmt
Notes
Parameter
Un
~
HM514256-10
HM5142.56
HM514256-15
min
m i x
min
max
min
max
Symbol
. . . . . .
..____
. . . . . .
K S
Pulse Width
~ R A S
100
10000
I20
10000
150
10000
n:
CAS Pulse Width
~
A
S
50
10000
60
10000
75
10000
n!
K S
to
Delay Time
~ R C D
25
50
25
60
30
75
n!
K S
Hold Time
~ R S H
50
-
60
-
75
-
n!
CAS Hold Time
.
~ C S H
100
-
120
-
150
-
n!
CAS
to
Precharge Time
tCRP
10
-
10
-
10
-
nr
Row Address Setup Time
~ A S R
0
-
0
-
0
-
ni
Row Address Hold Time
~ R A H
15
-
15
-
20
-
nr
Column Address Setup Time
(ASC
0
-
0
-
0
-
nr
nr
Column Address Hold Time
Write Command Setup Time
'wcs
0
-
0
-
0
-
ns
=Command
Hold Time
.
IWCH
20
-
25
-
30
-
nr
Write Command Pulse Width
tWD
I5
-
20
-
25
-
ns
_-
____
~ C A H
20
-
20
-
25
-
Operating c u r r e n t
t R C
=
260
nS
t R c
=
220
n s
t R C = 1 9 0 n s
40
55
-
47
mA
' 1 .
9 4
k C l
,
-
2
m A
TTL
Interface
-
1
m A
CMOS
Interface
S t a n d b y current
lccz
Refresh
current
t R C
260
nS
40
t R c
=
190
ns
55
-
47
mA
manly
Refresh"
t R C
=
220
ns
I c c 3
I
S t a n d b y
current
S
mA
'I
(Dout
Enable)
k C ¶
-
RAS=
VIH,
C A S
=
VIL
,
,
..
.
Write Command
to
UTS Lead
Time
~ R W L
35
-
40
-
45
-
nr
Write Command
to
C X
Lead Time
~ C W L
35
-
40
-
45
-
ns
Data-in Setup Time
IDS
0
-
0
-
0
-
ns
~-
___._.___
Refresh current
t R C
=
260
nS
40
E b e f o r e
t R C
= 220
n S
k C 6
-
47
mA
RAS Refresh
t R C = 1 9 0 n s
55
i
~ D H
20
-
25
-
30
-
nr
Data-in Hold Time
IRCS
0
-
0
-
0
-
ns
Read Command Setup Time
Read Command Hold
T i e
referenced
to
CAS
~ R C H
0
-
0
-
0
-
ns
-
Operating
current
t R C
=
105
ns
~ R C =
I o n s
t R C =
85ns
ICC7
40
47
mA
55
01. '5
Page m o d e
.
ReadCommandI(oldTimereferenced t o m
~ R R H
10
-
10
-
10
-
ns
REF
-
8
-
8
-
8
ms
__-_
Refresh Period
Read-Write Cycle Time
tRWC
265
-
305
-
360
-
nr
Read Modify Write Cycle Time
IRWS
175
-
205
-
250
-
ns
K S
to
W E
Delay
~ R W D
135
--
160
-
200
-
nr
C?S
to
W%
Delay
ICWD
85
-
100
-
125
-
n s
CAS Setup Time
tCSR
10
-
1 0
-
1 0
-
ns
C X H o l d Time(C?Sbefore m R e f t e s h )
~ C H R
20
-
25
-
30
-
ns
______
K S Precharge
to
-Hold
Time
tRPC
1 0
-
1 0
-
1 0
-
ns
Page Mode Read
or
Write Cycle
tPC
70
-
85
-
105
-
ns
CAS Precharge Time, Page Cycle
tCP
10
-
IS
-
20
-
ns
-_
Page Mode Read
-.
.
__
Modiry Write Cycle
~ P C M
145
-
170
-
205
-
ns
Page Mode CAS Pulse Width
ICRW
125
-
145
-
175
-
nr
(Read Modifv Write Cvclc)
--
-
.
. .
. .
-
. . .
.-
___._._
- _ _ I _
_ _ _ _ .
.
..__________
~ _ _ _ _ _ _ _ _ ~
Input
leakage
n
<
Vin
<
7V
IL1
-1 0
1 0
UA
Output
leakage
O < V o u t < 7 V
ILO
-10
10
UA
Dout is
disabled
O u t p u t
levels
Hah
Iout =
-5 m A
VOH
2 . 4
vcc
V
Low
Iout =
4.2
mA
VOL
0
0.4
V
Capacitance
Parameter
Symbol
TYP
MaX
Unit
Notes
5
PF
-2
Address
CI1
-
RAS,
K S . FE, F E
CI2
I
PF
*2
Data-InlData-Out
CI/O
-
1 0
PF
*2.
93
-
Notes) *I.
ICC
depends
on
o u t p u t loading c o n d i t i o n w h e n t h e device is selected.
ICC
max
ir
specified a t t h e o u t p u t o p e n
condition.
*2.
Ca acilance measured with B o o n t o n Meter or effqctive capacitance measuring method.
* 3 .
&
= V ~ H
to disable Dout.
*4. Address c a n b e changed less t h a n
3
l i m e s while
3.
Address can b e changed o n c e
o r less
while
m=
VIH.
i s
VIL.
Electrical Characteristics and Recommended AC Operating Conditions
(Ta
= 0
to
+70°C.
VCC =
5V
f
'10$4,)*1**10.*11
30
-
40
n s
ns
ns
ns
0
-
ns
0
-
0
-
ns
Access Time from
I %
IOAC
-
25
-
ODD
25
-
30
-
40
-
F E
to Data-in Delay Time
~ C D D
25
-
3 0
-
40
-
C x
t o Data-in Delay Time
6 i ?
Hold Time reference to Write
~ O E H
25
-
30
-
35
-
I D 2 0
0
-
0
-
m D e l a y Time from Din
K S
Delay Time from Din
tDZC
0
-
Notes)
* I .
AC
measurements assume
I+
=
5
ns.
. ._
*2. Assumes
that ~ R C D
5
1 ~ 1 - 0
(mix). If
~ R C D
is greater than t h e maximum recommended value shob
table. ~ R A C exceeds the value shown.
' 3 .
Measured with a load circuit equivalent
to
ZTTL loads and 100pF.
*4.
Assumes that ~ R C D
2
~ R C D (mix).
*5.
t ~ ~ ~ ( m a x )
defines the time
at
which the output achieves the open circuit condition and is not refe
output voltage levels.
*6.
VII{
(min) and
VIL
(man)
are reference levels for measuring timing o f input signals.
Also.
transition
measured between
VIH
and
VIL.
-7.
Operation with
the
~ R C D (max) limit insures that ~ R A C
(max)
can be met, ~ R C D (max) isspecified
.
ence point only. if IRCD is
greater
than the specified
~ R C D
(max) limit, then access time is controll
sivcly be
1c-c.
-8. twCS and ~ C W D are not restrictive operating parameters. They are included in t h e data sheet as electric
teristics only: if t w c s
2
twcs
(min). the cycle is an early write cycle and the data o u t pin will rev
circuil (high impedance) throughout the entire cycle; if t W D
2
~ C W D (min). l h e cycle is
a
readlwrit
data ou1vut will contain data read from the selected cell; if neither of the above sets of conditions is
the condition o f the data o u t (at access time) is indeterminate.
-9.
These parameters are referenced
to
leading edge ir
M i l e
or
read-modify-write cycles.
*lo.
An initial pause o f
1 0 0 ~ s
is required after power-up. Then execute at least 8 initialization cycles.
* I t .
In delayed write o r read-modify-wile cycles,
6 E
must
disable output buffers prior
to
applying da!
leading edge in early wrile cycles and t o
device.
1
HM514256-10 HM514256-12 HM514256-15
Unit Notes
Parameter
S y m b o l
min
max
min
m a x
min
m a x
Access
Time
f r o m
RAS
t u c
-
100
-
120
-
150
ns
*2.*3
k A C
-
50
-
60
-
75
ns
* 3 , . 4
Access T i m e
from CAS
O u t p u t
Buffer Turn-off Delay
tOFF1
.
-
25
-
30
-
40
ns
*5
Output Buffer Turn-off Delay referenced
to
FE
t O F F Z
-
25
-
30
-
40
ns
*5
Transition
T i e
(Rise a n d
Fall)
tT
3
50
3
SO
3
SO
ns
'6
R a n d o m Read
or
Write Cycle
Time
RAS
Precharge
Time
t R C
190
-
220
-
260
-
ns
t R P
80
-
90
-
100
-
ns
( t o b e continued)
@
HITACHI
354
@
HITACHI
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