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2SK3069
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
10 s, duty cycle
2. Value at Tc = 25
3. Value at Tch = 25
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note:
4. Pulse test
Rev.11.00 Sep 07, 2005 page 2 of 7
Symbol
I
D(pulse)
I
AP
E
AR
Pch
1 %
°
C
°
C, Rg
50
Symbol
Min
V
60
(BR)DSS
I
—
GSS
I
—
DSS
V
1.0
GS(off)
R
—
DS(on)
—
|y
|
50
fs
Ciss
—
Coss
—
Crss
—
Qg
—
Qgs
—
Qgd
—
t
—
d(on)
t
—
r
t
—
d(off)
t
—
f
V
—
DF
t
—
rr
V
DSS
V
GSS
I
D
Note 1
I
DR
Note 3
Note 3
Note 2
Tch
Tstg
–55 to +150
Typ
Max
—
—
—
0.1
—
10
—
2.5
6.0
7.5
8.0
12
80
—
7100
—
1000
—
280
—
125
—
25
—
25
—
60
—
300
—
520
—
330
—
1.05
—
90
—
Ratings
60
20
75
300
75
50
214
100
150
Unit
Test Conditions
V
I
= 10 mA, V
= 0
D
GS
A
V
= 20 V, V
GS
DS
A
V
= 60 V, V
= 0
DS
GS
V
I
= 1 mA, V
= 10 V
D
DS
m
I
= 40 A, V
= 10 V
D
GS
m
I
= 40 A, V
= 4 V
D
GS
S
I
= 40 A, V
= 10 V
D
DS
pF
V
= 10 V, V
= 0,
DS
GS
f = 1 MHz
pF
pF
nC
V
= 25 V, V
= 10 V,
DD
GS
I
= 75 A
nC
D
nC
ns
V
= 10 V, I
= 40 A,
GS
D
R
= 0.75
ns
L
ns
ns
V
I
= 75A, V
= 0
F
GS
ns
I
= 75A, V
= 0
F
GS
di
/ dt = 50 A/ s
F
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
(Ta = 25°C)
= 0
Note 4
Note 4
Note 4
Note 4
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