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2SK3069
Static Drain to Source on State
Resistance vs. Temperature
20
Pulse Test
16
12
4 V
8
4
0
–50
0
Case Temperature T
Body to Drain Diode Reverse
1000
500
200
100
50
20
10
0.1
0.3
Reverse Drain Current I
Dynamic Input Characteristics
100
I
= 75 A
D
80
60
V
DS
40
20
0
80
Gate Charge Qg (nc)
Rev.11.00 Sep 07, 2005 page 4 of 7
20 A
I
= 50 A
D
10 A
10, 20, 50 A
= 10 V
V
GS
50
100
150
(°C)
C
Recovery Time
di / dt = 50 A / µs
V
= 0, Ta = 25°C
GS
1
3
10
30
(A)
DR
V
GS
= 50 V
V
DD
25 V
10 V
V
= 50 V
DD
25 V
10 V
160
240
320
400
500
200
100
50
20
10
5
2
1
0.5
200
0.1
30000
10000
3000
1000
300
100
100
1000
20
500
16
200
12
100
8
50
4
20
0
10
0.1 0.2
Forward Transfer Admittance
vs. Drain Current
V
= 10 V
DS
Pulse Test
Tc = –25°C
25°C
75°C
0.3
1
3
10
Drain Current I
D
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Coss
Crss
0
10
20
30
Drain to Source Voltage V
Switching Characteristics
t d(off)
t f
t r
t d(on)
= 10 V, V
V
GS
DD
PW = 5 µs, duty < 1 %
2
5
10
1
0.5
Drain Current I
D
30
100
(A)
V
= 0
GS
f = 1 MHz
40
50
(V)
DS
= 30 V
20
50
100
(A)
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