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ELECTRICAL DATA
°
(T
= – 40
C to + 85
A
Parameter
Hysteresys Voltage of LVD
(Slew Rate of LVD)
Low level detect voltage
(S3C80C5/C80C8)
°
(T
= – 40
C to + 85
A
Parameter
Data retention supply
voltage
Data retention supply
current
°
(T
= – 40
C to + 85
A
Parameter
Input
capacitance
Output
capacitance
I/O capacitance
°
(T
= – 40
C to + 85
A
Parameter
Interrupt input,
High, Low width
4
13-
Table 13-3. Characteristics of Low Voltage Detect circuit
°
C)
Symbol
Table 13-4. Data Retention Supply Voltage in Stop Mode
°
C)
Symbol
V
DDDR
I
DDDR
Table 13-5. Input/output Capacitance
°
C, V
= 0 V)
DD
Symbol
Conditions
C
f = 1 MHz; unmeasured pins
IN
are connected to V
C
OUT
C
IO
Table 13-6. A.C. Electrical Characteristics
°
C)
Symbol
Conditions
t
P0.0–P0.7, V
,
INTH
t
INTL
Conditions
∆V
–
V
–
LVD
Conditions
–
V
= 1.0 V
DDDR
Stop mode
Min
SS
Min
3.6
=
V
DD
S3P80C5/C80C5/C80C8
Min
Typ
–
30
1.70
1.90
Min
Typ
1.0
–
–
–
Typ
—
—
Typ
200
300
Max
Unit
300
mV
2.1
V
Max
Unit
3.6
V
1
µA
Max
Unit
10
pF
Max
Unit
—
ns
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