Cypress Semiconductor CY7C1324H Specification Sheet

Cypress 2-mbit (128k x 18) flow-through sync sram specification sheet

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Features
• 128K x 18 common I/O
• 3.3V core power supply
• 3.3V/2.5V I/O supply
• Fast clock-to-output times
— 6.5 ns (133-MHz version)
• Provide high-performance 2-1-1-1 access rate
• User-selectable burst counter supporting Intel
®
Pentium
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Offered in JEDEC-standard lead-free 100-pin TQFP
package
• "ZZ" Sleep Mode option
Functional Description
The CY7C1324H is a 128K x 18 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
Logic Block Diagram
A0,A1,A
MODE
ADV
CLK
ADSC
ADSP
BW
B
BW
A
BWE
GW
CE
1
CE
2
CE
3
OE
ZZ
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 001-00208 Rev. *B
2-Mbit (128K x 18) Flow-Through Sync SRAM
®
[1]
ADDRESS
REGISTER
A[1:0]
Q1
BURST
COUNTER AND
LOGIC
CLR
Q0
DQ
,DQP
B
B
WRITE REGISTER
DQ
,DQP
A
A
WRITE REGISTER
ENABLE
REGISTER
SLEEP
CONTROL
198 Champion Court
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
), depth-expansion Chip Enables (CE
1
Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW
, and BWE ), and Global Write ( GW ). Asynchronous
[A:B]
i nputs include the Output Enable (OE) and the ZZ pin . The
CY7C1324H allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects
an interleaved burst sequence, while a LOW selects a linear
burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP) or the cache Controller
Address Strobe (ADSC) inputs. Address advancement is
controlled by the Address Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1324H operates from a +3.3V core power supply
while all outputs may operate with either a +3.3V or +2.5V
supply. All inputs and
JESD8-5-compatible.
DQ
,DQP
B
B
WRITE DRIVER
MEMORY
SENSE
ARRAY
AMPS
DQ
,DQP
A
A
WRITE DRIVER
,
San Jose
CA 95134-1709
CY7C1324H
and CE
), Burst
2
3
outputs
are
JEDEC-standard
OUTPUT
DQs
BUFFERS
DQP
A
DQP
B
INPUT
REGISTERS
408-943-2600
Revised April 26, 2006
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Summary of Contents for Cypress Semiconductor CY7C1324H

  • Page 1 • “ZZ” Sleep Mode option Functional Description The CY7C1324H is a 128K x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the...
  • Page 2: Selection Guide

    Selection Guide Maximum Access Time Maximum Operating Current Maximum Standby Current Pin Configurations BYTE B Document #: 001-00208 Rev. *B 133 MHz 100-pin TQFP Pinout CY7C1324H CY7C1324H Unit BYTE A Page 2 of 15 [+] Feedback...
  • Page 3: Pin Definitions

    ADSP is ignored if CE and CE to select/deselect the device. CE and CE to select/deselect the device. CE are placed in a tri-state condition. [A:B] CY7C1324H , CE , and CE are sampled active. and BWE). [A:B] is HIGH . CE...
  • Page 4 Maximum access delay from the clock rise (t ) is 6.5 ns (133-MHz device). The CY7C1324H supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486™...
  • Page 5: Truth Table

    This parameter is sampled This parameter is sampled ADSP ADSC , BW ) and BWE = L or GW= L. WRITE = H when all Byte Write Enable signals (BW CY7C1324H Min. Max. Unit ADV WE OE CLK Tri-State Tri-State...
  • Page 6 [2, 3] Truth Table for Read/Write Function Read Read Write Byte (A, DQP Write Byte (B, DQP Write All Bytes Write All Bytes Document #: 001-00208 Rev. *B CY7C1324H Page 6 of 15 [+] Feedback...
  • Page 7: Maximum Ratings

    ≤ 0.3V, – 0.3V or V /2), undershoot: V (AC) > –2V (Pulse width less than t (min.) within 200 ms. During this time V < V and V CY7C1324H + 0.5V Ambient Temperature 0°C to +70°C 3.3V 2.5V –5% −5%/+10%...
  • Page 8 5 pF R = 351Ω INCLUDING JIG AND SCOPE R = 1667Ω 2.5V 5 pF R =1538Ω INCLUDING JIG AND SCOPE CY7C1324H 100 TQFP Max. Unit 100 TQFP Package Unit °C/W 30.32 °C/W 6.85 ALL INPUT PULSES ≤ 1 ns ≤...
  • Page 9: Switching Characteristics

    V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CY7C1324H -133 Max. Unit (minimum) initially before a Read or Write operation...
  • Page 10: Timing Diagrams

    Q(A2 + 1) Q(A2 + 2) BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH, CE CY7C1324H Deselect Cycle t CHZ Q(A2 + 3) Q(A2) Q(A2 + 1) Q(A2 + 2) Burst wraps around...
  • Page 11 ADV suspends burst. D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) BURST WRITE DON’T CARE UNDEFINED LOW. [A:B] CY7C1324H ADSC extends burst. t ADS t ADH t WES t WEH t ADVS t ADVH D(A2 + 3) D(A3)
  • Page 12 18. GW is HIGH. Document #: 001-00208 Rev. *B t DS t DH t OELZ D(A3) t CDV Q(A4) Q(A4+1) Single WRITE BURST READ DON’T CARE UNDEFINED CY7C1324H D(A5) D(A6) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page 12 of 15 [+] Feedback...
  • Page 13 19. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 20. DQs are in High-Z when exiting ZZ sleep mode. Document #: 001-00208 Rev. *B ZZREC t RZZI DESELECT or READ Only High-Z DON’T CARE CY7C1324H Page 13 of 15 [+] Feedback...
  • Page 14: Ordering Information

    Package (MHz) Ordering Code Diagram CY7C1324H-133AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1324H-133AXI 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Package Diagram 100-pin TQFP (14 x 20 x 1.4 mm) (51-85050) R 0.08 MIN.
  • Page 15 Document History Page Document Title: CY7C1324H 2-Mbit (128K x 18) Flow-Through Sync SRAM Document Number: 001-00208 REV. ECN NO. Issue Date 347377 See ECN 428408 See ECN 459347 See ECN Document #: 001-00208 Rev. *B Orig. of Change Description of Change New Data Sheet Converted from Preliminary to Final.

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