Cypress Semiconductor CY7C1339G Specification Sheet

Cypress Semiconductor CY7C1339G Specification Sheet

Cypress 4-mbit (128k x 32) pipelined sync sram specification sheet

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Features
• Registered inputs and outputs for pipelined operation
• 128K × 32 common I/O architecture
• 3.3V core power supply (V
• 2.5V/3.3V I/O power supply (V
• Fast clock-to-output times
— 2.6 ns (for 250-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel
®
Pentium
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Available in lead-free 100-Pin TQFP package, lead-free
and non-lead-free 119-Ball BGA package
• "ZZ" Sleep Mode Option
Logic Block Diagram
A 0, A 1, A
M ODE
A DSC
A DSP
BW
BW
1
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05520 Rev. *F
4-Mbit (128K x 32) Pipelined Sync SRAM
)
DD
)
DDQ
®
A DDRESS
REGISTER
2
A DV
BURST
CLK
COUNTER
A ND
CLR
LOGIC
DQ
D
BYTE
D
W RITE REGISTER
DQ
C
BYTE
C
W RITE REGISTER
DQ
B
BYTE
BW
B
W RITE REGISTER
DQ
A
BYTE
BW
A
W RITE REGISTER
BW E
GW
ENA BLE
PIPELINED
CE
1
REGISTER
ENABLE
CE
2
CE
3
OE
SLEEP
ZZ
CONTROL
198 Champion Court
Functional Description
The CY7C1339G SRAM integrates 128K x 32 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
), depth-expansion Chip Enables (CE
1
Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW
, and BWE), and Global Write ( GW ). Asynchronous
[A:D]
inputs include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the byte write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1339G operates from a +3.3V core power supply
while all outputs may operate with either a +2.5 or +3.3V
supply. All inputs and
JESD8-5-compatible.
A
[1:0]
Q1
Q0
DQ
D
BYTE
W RITE DRIVER
DQ
C
BYTE
W RITE DRIVER
M EM ORY
SENSE
A RRA Y
A M PS
DQ
B
BYTE
W RITE DRIVER
DQ
A
BYTE
W RITE DRIVER
,
San Jose
CA 95134-1709
CY7C1339G
[1]
and CE
), Burst
2
3
outputs
are
JEDEC-standard
OUTPUT
OUTPUT
D Q s
BUFFERS
REGISTERS
E
INPUT
REGISTERS
408-943-2600
Revised July 5, 2006
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Summary of Contents for Cypress Semiconductor CY7C1339G

  • Page 1 Document #: 38-05520 Rev. *F 4-Mbit (128K x 32) Pipelined Sync SRAM Functional Description The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK).
  • Page 2: Pin Configurations

    Maximum Operating Current Maximum CMOS Standby Current Pin Configurations BYTE C BYTE D Document #: 38-05520 Rev. *F 250 MHz 200 MHz 166 MHz 100-Pin TQFP Pinout CY7C1339G CY7C1339G 133 MHz Unit BYTE B BYTE A Page 2 of 18 [+] Feedback...
  • Page 3 ADSP is ignored if CE to select/deselect the device.CE is sampled only when a new external address is to select/deselect the device. CE is sampled only when a new external address is CY7C1339G NC/9M NC/576M NC/1G NC/36M...
  • Page 4: Functional Overview

    Maximum access delay from the clock rise (t (250-MHz device). The CY7C1339G supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486™...
  • Page 5 A synchronous self-timed Write mechanism has been provided to simplify the Write operations. Because the CY7C1339G is a common I/O device, the Output Enable (OE) must be deserted HIGH before presenting data to the DQs inputs. Doing so will tri-state the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a Write cycle is detected, regardless of the state of OE.
  • Page 6: Truth Table

    Document #: 38-05520 Rev. *F ADSP ADSC , BW , BW , BW ) and BWE = L or GW= L. WRITE = H when all Byte write enable signals and CE CY7C1339G ADV WRITE OE CLK Tri-State Tri-State Tri-State Tri-State Tri-State Tri-State...
  • Page 7 8.Table only lists a partial listing of the byte write combinations. Any combination of BW Document #: 38-05520 Rev. *F [2, 8] is valid. Appropriate write will be done based on which byte write is active. CY7C1339G Page 7 of 18 [+] Feedback...
  • Page 8: Maximum Ratings

    ≤ 0.3V or V > V – 0.3V, /2), undershoot: V (AC) > –2V (Pulse width less than t (min.) within 200 ms. During this time V < V and V CY7C1339G + 0.5V Ambient Temperature 0°C to +70°C 3.3V 2.5V –5% –5%/+10% to V Min.
  • Page 9 R = 1667Ω 2.5V 2.5V OUTPUT OUTPUT 5 pF 5 pF R = 1538Ω R = 1538Ω INCLUDING INCLUDING JIG AND JIG AND SCOPE SCOPE CY7C1339G Min. Max. TQFP Package Package Unit TQFP Package Package Unit °C/W 30.32 34.1 °C/W 6.85...
  • Page 10: Switching Characteristics

    V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ = 2.5V. CY7C1339G –166 –133 Max. Min. Max. Min. Max. Unit...
  • Page 11: Switching Waveforms

    Q(A2) Q(A2 + 1) Q(A2 + 2) BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH, CE CY7C1339G Burst continued with new base address Deselect cycle t CHZ Q(A2 + 3) Q(A2) Q(A2 + 1)
  • Page 12 ADV suspends burst D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) BURST WRITE DON’T CARE UNDEFINED LOW. [A:D] CY7C1339G t ADS t ADH t WES t WEH ADVS ADVH D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2)
  • Page 13 21. GW is HIGH. Document #: 38-05520 Rev. *F t WES t WEH t DS t DH t OELZ D(A3) Q(A4) Q(A4+1) Single WRITE BURST READ DON’T CARE UNDEFINED CY7C1339G D(A5) D(A6) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page 13 of 18 [+] Feedback...
  • Page 14 22. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 23. DQs are in high-Z when exiting ZZ sleep mode. Document #: 38-05520 Rev. *F DDZZ High-Z DON’T CARE CY7C1339G ZZREC t RZZI DESELECT or READ Only Page 14 of 18 [+] Feedback...
  • Page 15: Ordering Information

    Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit Speed (MHz) Ordering Code CY7C1339G-133AXC CY7C1339G-133BGC CY7C1339G-133BGXC CY7C1339G-133AXI CY7C1339G-133BGI CY7C1339G-133BGXI CY7C1339G-133AXE CY7C1339G-166AXC CY7C1339G-166BGC CY7C1339G-166BGXC CY7C1339G-166AXI CY7C1339G-166BGI CY7C1339G-166BGXI CY7C1339G-200AXC CY7C1339G-200BGC...
  • Page 16: Package Diagrams

    2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS CY7C1339G 1.40±0.05 12°±1° SEE DETAIL (8X) 0.20 MAX.
  • Page 17 Cypress against all charges. 119-Ball BGA (14 x 22 x 2.4 mm) (51-85115) Ø1.00(3X) REF. 0.15(4X) CY7C1339G Ø0.05 M C Ø0.25 M C A B Ø0.75±0.15(119X) 1.27...
  • Page 18 Document History Page Document Title: CY7C1339G 4-Mbit (128K x 32) Pipelined Sync SRAM Document Number: 38-05520 Orig. of REV. ECN NO. Issue Date Change 224368 See ECN 288909 See ECN 332895 See ECN 351194 See ECN 366728 See ECN 420883...

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