Usb Interface - Quectel EC200U Series Hardware Design

Lte standard module
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USIM_GND
USIM_VDD
USIM_RST
Module
USIM_CLK
USIM_DATA
Figure 18: Reference Circuit of (U)SIM Interface with a 6-Pin (U)SIM Card Connector
In order to enhance the reliability and availability of the (U)SIM card in your applications, please follow the
criteria below in (U)SIM circuit design:
Place (U)SIM card connector as close to the module as possible. Keep the trace length less than 200
mm as far as possible.
Keep (U)SIM card signals away from RF and VBAT traces.
Keep the trace between the ground of (U)SIM card connector and USIM_GND short and wide. Keep
the trace width of USIM_GND and USIM_VDD no less than 0.5 mm to maintain the same electric
potential. If the ground is complete on your PCB, USIM_GND can be connected to PCB ground
directly.
To avoid cross-talk between USIM_DATA and USIM_CLK, keep them away from each other and
shield them with surrounded ground.
In order to offer good ESD protection, it is recommended to add a TVS diode array whose parasitic
capacitance should not be more than 15 pF. The 0 Ω resistors should be added in series between the
module and the (U)SIM card to facilitate debugging. The 33 pF capacitors on USIM_DATA,
USIM_CLK and USIM_RST are used for filtering interference of EGSM900. Please note that the
(U)SIM peripheral circuit should be close to the (U)SIM card connector.
The pull-up resistor on USIM_DATA can improve anti-jamming capability of the (U)SIM card. If the
(U)SIM card traces are too long, or the interference source is relatively close, it is recommended to
add a pull-up resistor near the (U)SIM card connector.

3.9. USB Interface

The module provides one integrated Universal Serial Bus (USB) interface which complies with the USB
2.0 specification and supports high-speed (480 Mbps) and full-speed (12 Mbps) modes. The USB
EC200U_Series_Hardware_Design
USIM_VDD
10 K
100 nF
0R
0R
0R
33 pF 33 pF 33 pF
GND
LTE Standard Module Series
(U)SIM Card Connector
VCC
RST
CLK
GND
GND
VPP
IO
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