Quectel EC200U Series Hardware Design page 23

Lte standard module
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(U)SIM Interface
Pin Name
Pin No.
USIM_GND
10
USIM_VDD
14
USIM_DATA
15
USIM_CLK
16
USIM_RST
17
USIM_DET
13
EC200U_Series_Hardware_Design
I/O
Description
(U)SIM1 card GND
(U)SIM1 card power
PO
supply
DIO
(U)SIM1 card data
DO
(U)SIM1 card clock
DO
(U)SIM1 card reset
DI
(U)SIM card
LTE Standard Module Series
DC Characteristics Comment
I
max = 50 mA
O
For 1.8 V (U)SIM:
Vmax = 1.9 V
Vmin = 1.7 V
For 3.0 V (U)SIM:
Vmax = 3.05 V
Vmin = 2.7 V
For 1.8 V (U)SIM:
V
max = 0.6 V
IL
V
min = 1.2 V
IH
V
max = 0.45 V
OL
V
min = 1.35 V
OH
For 3.0 V (U)SIM:
V
max =1.0 V
IL
V
min = 1.95 V
IH
V
max = 0.45 V
OL
V
min = 2.55 V
OH
For 1.8 V (U)SIM:
V
max = 0.45 V
OL
V
min = 1.35 V
OH
For 3.0 V (U)SIM:
V
max = 0.45 V
OL
V
min = 2.55 V
OH
For 1.8 V (U)SIM:
V
max = 0.45 V
OL
V
min = 1.35 V
OH
For 3.0 V (U)SIM:
V
max = 0.45 V
OL
V
min = 2.55 V
OH
V
min = -0.3 V
IL
unused, keep it open.
Connect to the GND
of (U)SIM card
connector.
Either 1.8 V or 3.0 V
can be recognized by
the module
automatically.
1.8 V power domain.
18 / 94

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