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Introduction
1
Introduction
The Texas Instruments LM74670-Q1-SQ Evaluation Module helps designers evaluate the operation and
performance of the LM74670-Q1 Reverse Polarity Protection Smart Diode Controller. This EVM
demonstrates how an N-Channel power MOSFET can emulate a very low forward voltage diode with zero
Iq and low leakage current flowing through the IC. In this design scheme the LM74670-Q1 is combined
with a MOSFET and used in series with battery as a replacement for schottky diode and PFET in reverse
polarity protection circuitry as shown in
electrical characteristics, see the LM74670-Q1 Reverse Polarity Protection Smart Diode Controller Data
Sheet (LM74670-Q1).
CONVERTER
U1
2
Setup
This section describes the jumpers and connectors on the EVM as well and how to properly connect, set
up and use the LM74670-Q1-SQEVM. Ensure the power supply is turned off while making connections on
the board.
2.1
Input/Output Connector Description
•
VBAT_1: Power input connector to the positive rail of the input power supply.
•
GND: Battery ground connector.
•
VOUT: is the power output connector to the positive side of the load.
•
TEST POINTS: are also available at VBAT_1, GND, VOUT, DRV_1 (MOSFET Gate Voltage), and
VCAP_1 (Charge pump capacitor).
Vbatt
4
List of Tables
Figure 1
Table 1. Device and Package Configurations
Anode
TVS+
LM74670-Q1
TVS-
Figure 1. LM74670-Q1 Typical Application Circuit
Copyright © 2015, Texas Instruments Incorporated
. For more information on the LM74670-Q1 functional and
IC
LM74670-Q1
Cathode
Cout
Vcap
www.ti.com
PACKAGE
VSSOP-8
Voltage
Vout
Regulator
SNVU494 – October 2015
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