Figure 4.1C Silicon Probe Tip Profile Artifact (Front To Back) - Veeco 004-210-000 Instruction Manual

Cantilever Preparation
Silicon Cantilever Substrates
Scan line produced using a theoretical
probe tip shape on a 1 - 2 µm deep
vertical wall trench
Scan direction = 0 deg.
Scan Line Profile
The best orientation of the sample to measure sidewall angles, uses the back edge of the tip (that
which faces back towards the cantilever substrate) to measure step angles (refer to
Using the back edge, step angles approaching 80 degrees can be measured routinely, depending on
the step height. Ensure that the area of measurement offers sufficient clearance so that other faces
and edges of the tip and lever do not interfere with the measurement. This method does not work
well in small openings of less than 5µm where, depending on the depth of the step, other edges of
the tip could contact the other faces of the small opening. Wall angle measurements are best
measured in open areas for these reasons.
60
Figure 4.1c Silicon Probe Tip Profile Artifact (front to back)
55°
1 µm - 2 µm Deep Trench
Note: Any wall angle on the left wall that is > 55 deg.
will be shown as 55 deg. in the image.
MultiMode SPM Instruction Manual
80°
˚
11 10°
Figure 4.1c).
Rev. B