Infineon EVAL-PS-DP-MAIN-M5 Manual page 16

p u b l i c
EVAL-PS-DP-MAIN-M5
Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247
4pin/3pin packages
Table of contents
Configuring the efficiency measurement
To comprehend the switching behavior of a semiconductor device fully, it must be tested inside a switching cell.
Additional analysis is required to convert the received switching-loss data into values that are more useful for an
application, such as the efficiency of the converter, the temperature of the devices, or the cooling effort required.
This section outlines the steps necessary to set up and operate the board as a buck converter under
Configuration 3 as listed in Table 4 Error! Reference source not found..
To prepare the test setup for measuring efficiency, follow these steps:
1. Assemble the devices under tests S1 and S2.
a. Adjust the driving voltages for S2, and if necessary, also for S1, according to Section 2.6.1.
b. Set the jumper X108/X106 to +ADJ.
c. Use the jumper X108/X106 to set the turn-off voltage to 0 V or -5 V.
d. Adjust the turn-on and turn-off gate resistors, R102/R108 and R105/R107 respectively.
2. Connect the oscilloscope probes to measure V
a. Use the probe adapters to measure V
b. Measure I
3. Connect an auxiliary supply to the 15 V/SGND terminal of the board and provide a voltage of 15 V.
4. Connect a signal generator to X103/X104 and provide a double-pulse pattern manually. Alternatively, the
double-pulse pattern can also be provided automatically using the XMC4800 controller.
5. Connect a high-voltage source to X9 and X11.
6. Connect an ohmic load to X10 and X11.
7. Measure the input and output power using a power meter and the device's temperatures using an
infrared camera.
8. Slowly increase the input voltage while monitoring the waveforms and device temperatures.
User guide
using a shunt.
D
, V , and I of S2.
DS GS D
and V with ordinary voltage probes.
DS GS
16 Revision 1.0
2025-01-10