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UG-2025-01
EVAL-PS-DP-MAIN-M5
Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247
4pin/3pin packages
About this document
Scope and purpose
This document describes an evaluation board suitable for SiC MOSFETs and IGBTs in various TO-247 packages
with compact gate driver ICs. Board can be controlled wirelessly using the XMC4800 control board to provide a
double-pulse signal with different dead times or a constant pulse width modulation signals. This user guide
explains the board's hardware and GUI. It provides a detailed explanation on various features of the board that
can be used for measurements.
Intended audience
This board is intended for engineers who want to use TO-247 devices and respective gate driver IC in
applications with a half-bridge topology.
Evaluation board
This board is to be used during the design-in process for evaluating and measuring characteristic curves, and
for checking datasheet specifications.
Note:
PCB and auxiliary circuits are NOT optimized for final customer design.
User guide
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.0
2025-01-10
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Summary of Contents for Infineon EVAL-PS-DP-MAIN-M5
- Page 1 UG-2025-01 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages About this document Scope and purpose This document describes an evaluation board suitable for SiC MOSFETs and IGBTs in various TO-247 packages with compact gate driver ICs.
- Page 2 Boards provided by Infineon Technologies. The design of the Evaluation Boards and Reference Boards has been tested by Infineon Technologies only as described in this document. The design is not qualified in terms of safety requirements, manufacturing and operation over the entire operating temperature range or lifetime.
- Page 3 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Safety precautions Safety precautions Note: Please note the following warnings regarding the hazards associated with development systems Safety precautions Table 1 Warning: The DC link potential of this board is up to 1000 VDC.
- Page 4 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents Table of contents About this document ........................1 Important notice ..........................2 Safety precautions .......................... 3 Table of contents ..........................
- Page 5 [1] with additional features for easy and efficient evaluations. Figure 1 EVAL-PS-DP-MAIN-M5 evaluation board The EVAL-PS-DP-MAIN-M5 evaluation board has the following features: Through-hole universal sockets instead of solder points for the DUTs. This provides easy replacement of • DUTs for repetitive measurements To reduce the lead inductance, it is recommended to reduce the leads length to a minimum.
- Page 6 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents Temperature is an important factor that influences the switching behavior of devices. To investigate the switching behavior at high temperatures, EVAL-PS-DP-MAIN_M5 is equipped with a heating function through which temperature can be monitored and adjusted according to test requirements.
- Page 7 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents Scope of the delivery content Table 1Error! Reference source not found. lists the deliverables included with the EVAL_PS_DP_MAIN_M5 b oard.
- Page 8 Table of contents System and functional description The complete design package is available in the Download section of Infineon’s website. Log in with myInfineon credentials to download this material. A brief overview of the board’s hardware, shown in Figure 3, is provided in this chapter.
- Page 9 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents Figure 4 Evaluation board with daughter card and DUTs The switches are driven by compact driver ICs from the respective daughter card. The two drivers are independently controlled by PWM signals on the connectors X103 for the high-side and X104 for the low-side PWM.
- Page 10 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents Commissioning Figure 5 Circuit composition The DC source should be connected to +HV_VDC and GND-SEC. The inductor is plugged into the HV_Midpoint and depending on the test to be used either to the +HV_VDC or the GND-SEC, as displayed in Figure 5.
- Page 11 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents Figure 6 Auxiliary-power and drive-voltage connectors Additionally, X106 and X108, shown in Figure 6, are for setting the correct drive voltage on the daughter cards, ranging from +20 V to - 5 V.
- Page 12 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents measurements. Configuration 3 and Configuration 4 can be used for buck and boost converters, respectively. As these converters process power continuously.
- Page 13 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents (1) Converter (Boost) Switch S1 < 800 V Diode S2 - Note 1 Package TO-247 Notes: 1.
- Page 14 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents Tuning gate voltages The driver bias circuitry used to operate both the high-side and low-side switches is shown inError! Reference s ource not found.
- Page 15 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents Adjusting the heatsink temperature Besides room temperature, switching losses can also be measured at 100°C and more. Therefore, the measuring setup should help users control and track the case temperature of a test device.
- Page 16 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents Configuring the efficiency measurement To comprehend the switching behavior of a semiconductor device fully, it must be tested inside a switching cell.
- Page 17 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents The start-up procedure includes the following steps: Mount the drive card on the motherboard and set the jumpers to the required supply voltage.
- Page 18 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents System design Visit Infineon’s website for complete design files. They are available on the board’s webpage in the “Design support” section. MyInfineon login credentials are required to access the files. Schematic drawings Figure 8...
- Page 19 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents Figure 9 Power connector and heater schematics User guide Revision 1.0 2025-01-10...
- Page 20 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Table of contents Board layout Figure 10 Layout of the EVAL-PS-DP_MAIN_M5 board User guide Revision 1.0 2025-01-10...
- Page 21 [https://www.infineon.com/dgdl/Infineon-UG-2021-32_EVAL_PS_DP_MAIN-UserManual-v01_00- EN.pdf?fileId=8ac78c8c7c03edb4017c271760fa40] [2] Infineon Technologies AG. User guide 1.0 (2023): EVAL-COOLSIC-2KVHCC: [https://www.infineon.com/dgdl/Infineon-UG-2023-06-EVAL-COOLSIC-2KVHCC-UserManual-v01_00- EN.pdf?fileId=8ac78c8c8779172a0187dbcae33a43c2] [3] Infineon Technologies AG. AppNote 1.0 (2017): [https://new-origin.infineon.com/dgdl/Infineon- EvalBoard_TO247_PLUS-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4625fe36784015fee4ae76260d0] [4] Infineon Technologies AG. User guide 1.0 (2017): EVAL-XMC4800PSOC6M5 user guide [https://www.infineon.com/dgdl/Infineon-UG-2023-07-EVAL-XMC4800PSOC6M5-UserManual-v01_00- EN.pdf?fileId=8ac78c8c8d2fe47b018e12871028537c] User guide Revision 1.0 2025-01-10...
- Page 22 EVAL-PS-DP-MAIN-M5 Evaluation platform for 600 – 1200 V SiC MOSFETs and IGBTs in TO-247 4pin/3pin packages Revision history Revision history Document Date Description of changes revision 10 January 2025 First version User guide Revision 1.0...
- Page 23 For information on the types in question please contact your nearest Published by Infineon Technologies office. Except as otherwise explicitly approved by Infineon Infineon Technologies AG Technologies in a written document signed by 81726 Munich, Germany authorized...
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