Cypress Semiconductor MoBL CY62126EV30 Specification Sheet

1-mbit (64k x 16) static ram

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Features
High speed: 45 ns
Temperature ranges
Industrial: –40°C to +85°C
Automotive: –40°C to +125°C
Wide voltage range: 2.2V to 3.6V
Pin compatible with CY62126DV30
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 4 μA
Ultra low active power
Typical active current: 1.3 mA at f = 1 MHz
Easy memory expansion with CE and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Offered in Pb-free 48-ball VFBGA and 44-pin TSOP II
packages
Logic Block Diagram
Note
1. For best practice recommendations, refer to the Cypress application note
Cypress Semiconductor Corporation
Document #: 38-05486 Rev. *E
1-Mbit (64K x 16) Static RAM

Functional Description

The CY62126EV30 is a high performance CMOS static RAM
organized as 64K words by 16 bits
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device in standby mode reduces power consumption by more
than 99 percent when deselected (CE HIGH). The input and
output pins (IO
state when:
Deselected (CE HIGH)
Outputs are disabled (OE HIGH)
Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH)
Write operation is active (CE LOW and WE LOW)
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from IO pins (IO
specified on the address pins (A
Enable (BHE) is LOW, then data from IO pins (IO
is written into the location specified on the address pins (A
through A
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on IO
Byte High Enable (BHE) is LOW, then data from memory
appears on IO
complete description of read and write modes.
AN1064, SRAM System Guidelines.
198 Champion Court
MoBL
through IO
) are placed in a high impedance
0
15
through IO
) is written into the location
0
7
0
).
15
to IO
. See the
"Truth Table"
8
15
,
San Jose
CA 95134-1709
®
,CY62126EV30
[1]
. This device features
®
) in portable
through A
). If Byte High
15
through IO
)
8
15
0
to IO
. If
0
7
on page 9 for a
408-943-2600
Revised January 5, 2009
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Summary of Contents for Cypress Semiconductor MoBL CY62126EV30

  • Page 1: Functional Description

    Features High speed: 45 ns ■ Temperature ranges ■ Industrial: –40°C to +85°C ❐ Automotive: –40°C to +125°C ❐ Wide voltage range: 2.2V to 3.6V ■ Pin compatible with CY62126DV30 ■ Ultra low standby power ■ Typical standby current: 1 μA ❐...
  • Page 2: Pin Configurations

    Pin Configurations Figure 1. 44-Ball VFBGA (Top View) Table 1. Product Portfolio Product Range CY62126EV30LL Industrial CY62126EV30LL Automotive Notes 2. NC pins are not connected on the die. 3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V Document #: 38-05486 Rev.
  • Page 3: Maximum Ratings

    Maximum Ratings Exceeding maximum ratings may shorten the battery life of the device. These user guidelines are not tested. Storage Temperature ... –65°C to +150°C Ambient Temperature with Power Applied ... –55°C to +125°C Supply Voltage to Ground Potential... –0.3V to 3.6V (V DC Voltage Applied to Outputs [4, 5] in High-Z State...
  • Page 4: Thermal Resistance

    Thermal Resistance Tested initially and after any design or process changes that may affect these parameters. Parameter Description Θ Thermal Resistance (Junction to Ambient) Θ Thermal Resistance (Junction to Case) OUTPUT 30 pF INCLUDING JIG AND SCOPE Parameters Data Retention Characteristics Over the Operating Range Parameter Description...
  • Page 5: Switching Characteristics

    Switching Characteristics [10, 11] Over the Operating Range Parameter Description Read Cycle Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid [12] OE LOW to Low Z LZOE [12, 13] OE HIGH to High Z...
  • Page 6: Switching Waveforms

    Switching Waveforms Figure 5. Read Cycle No. 1(Address transition controlled) ADDRESS PREVIOUS DATA VALID DATA OUT Figure 6. Read Cycle No. 2 (OE controlled) ADDRESS LZOE BHE/BLE LZBE HIGH IMPEDANCE DATA OUT LZCE SUPPLY CURRENT Notes 15. The device is continuously selected. OE, CE = V 16.
  • Page 7 Switching Waveforms (continued) Figure 7. Write Cycle No. 1 (WE controlled) ADDRESS BHE/BLE NOTE 20 DATA IO HZOE Figure 8. Write Cycle No. 2 (CE controlled) ADDRESS BHE/BLE DATA IO NOTE 20 HZOE Notes 18. Data IO is high impedance if OE = V 19.
  • Page 8 Switching Waveforms (continued) Figure 9. Write Cycle No. 3 (WE controlled, OE LOW ADDRESS BHE/BLE DATA IO NOTE 20 HZWE Figure 10. Write Cycle No. 4 (BHE/BLE controlled, OE LOW) ADDRESS BHE/BLE NOTE 20 DATA IO Document #: 38-05486 Rev. *E DATA HZWE DATA...
  • Page 9: Truth Table

    Truth Table Ordering Information Speed (ns) Ordering Code CY62126EV30LL-45BVXI CY62126EV30LL-45ZSXI CY62126EV30LL-55BVXE CY62126EV30LL-55ZSXE Contact your local Cypress sales representative for availability of other parts. Document #: 38-05486 Rev. *E Inputs/Outputs High Z Deselect/Power Down High Z Output Disabled Data Out (IO –IO Read Data Out (IO...
  • Page 10: Package Diagrams

    Package Diagrams Figure 11. 48-Ball VFBGA (6 x 8 x 1 mm) (51-85150) TOP VIEW A1 CORNER 6.00±0.10 SEATING PLANE Document #: 38-05486 Rev. *E ® MoBL , CY62126EV30 BOTTOM VIEW A1 CORNER Ø0.05 M C Ø0.25 M C A B Ø0.30±0.05(48X) 1.875 0.75...
  • Page 11 ® MoBL , CY62126EV30 Package Diagrams (continued) Figure 12. 44-Pin TSOP II (51-85087) 51-85087-*A Document #: 38-05486 Rev. *E Page 11 of 13 [+] Feedback...
  • Page 12 Document History Page ® Document Title: MoBL CY62126EV30, 1-Mbit (64K x 16) Static RAM Document Number: 38-05486 Submission Orig. of Rev. ECN No. Date Change 202760 See ECN 300835 See ECN 461631 See ECN 925501 See ECN 1045260 See ECN 2631771 01/07/09 NXR/PYRS Changed CE condition from X to L in Truth table for Output Disable mode...
  • Page 13 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress.com/sales. Products PSoC Clocks & Buffers Wireless wireless.cypress.com Memories memory.cypress.com...

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