Cypress Semiconductor CY62147DV18 Specification Sheet

Features
• Very high speed: 55 ns and 70 ns
• Wide voltage range: 1.65V – 2.25V
• Pin-compatible with CY62147CV18
• Ultra-low active power
— Typical active current: 1 mA @ f = 1 MHz
— Typical active current: 6 mA @ f = f
• Ultra low standby power
• Easy memory expansion with CE, and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered 48-ball BGA
Functional Description
The CY62147DV18 is a high-performance CMOS static RAM
organized as 256K words by 16 bits. This device features ad-
vanced circuit design to provide ultra-low active current. This
is ideal for providing More Battery Life™ (MoBL™) in portable
applications such as cellular telephones. The device also has
an automatic power-down feature that significantly reduces
power consumption. The device can also be put into standby
Logic Block Diagram
Note:
1. For best practice recommendations, please refer to the Cypress application note "System Design Guidelines" on http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05343 Rev. *B
max
[1]
DATA IN DRIVERS
A
10
A
9
A
8
A
7
A
6
A
256K x 16
5
A
RAM Array
4
A
3
A
2
A
1
A
0
COLUMN DECODER
-
Pow er Down
Circuit
• 3901 North First Street
4-Mb (256K x 16) Static RAM
mode reducing power consumption by more than 99% when
deselected (CE HIGH or both BLE and BHE are HIGH). The
input/output pins (I/O through I/O
0
pedance state when: deselected (CE HIGH), outputs are dis-
abled (OE HIGH), both Byte High Enable and Byte Low Enable
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW and WE LOW).
Writing to the device is accomplished by asserting Chip En-
able (CE) and Write Enable (WE) inputs LOW. If Byte Low
Enable (BLE) is LOW, then data from I/O pins (I/O
I/O ), is written into the location specified on the address pins
7
(A through A ). If Byte High Enable (BHE) is LOW, then data
0 17
from I/O pins (I/O through I/O
8
specified on the address pins (A
Reading from the device is accomplished by asserting Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O to I/O
0
LOW, then data from memory will appear on I/O
the truth table for a complete description of read and write
modes.
The CY62147DV18 is available in a 48-ball FBGA package.
I/O – I/O
0
I/O – I/O
8
,
• San Jose CA 95134
CY62147DV18
MoBL2™
) are placed in a high-im-
15
through
0
) is written into the location
15
through A ).
0 17
. If Byte High Enable (BHE) is
7
to I/O . See
8 15
7
15
BHE
WE
CE
OE
BLE
• 408-943-2600
Revised February 26, 2004
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