Cypress Semiconductor CY7C1316BV18 Specification Sheet

Features
■ 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
■ 300 MHz clock for high bandwidth
■
2-word burst for reducing address bus frequency
■ Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) at 300 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Synchronous internally self-timed writes
■ 1.8V core power supply with HSTL inputs and outputs
■ Variable drive HSTL output buffers
■ Expanded HSTL output voltage (1.4V–V
■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)
■
Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1316BV18 – 2M x 8
CY7C1916BV18 – 2M x 9
CY7C1318BV18 – 1M x 18
CY7C1320BV18 – 512K x 36
Selection Guide
Description
Maximum Operating Frequency
Maximum Operating Current
Cypress Semiconductor Corporation
Document Number: 38-05621 Rev. *D
)
DD
300 MHz 278 MHz
300 278
x8 815 775
x9 820 780
x18 855 805
x36 930 855
• 198 Champion Court
CY7C1316BV18, CY7C1916BV18
CY7C1318BV18, CY7C1320BV18
18-Mbit DDR-II SRAM 2-Word
Burst Architecture

Functional Description

The CY7C1316BV18, CY7C1916BV18, CY7C1318BV18, and
CY7C1320BV18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II architecture. The DDR-II consists of an
SRAM core with advanced synchronous peripheral circuitry and
a one-bit burst counter. Addresses for read and write are latched
on alternate rising edges of the input (K) clock. Write data is
registered on the rising edges of both K and K. Read data is
driven on the rising edges of C and C if provided, or on the rising
edge of K and K if C/C are not provided. Each address location
is associated with two 8-bit words in the case of CY7C1316BV18
and two 9-bit words in the case of CY7C1916BV18 that burst
sequentially into or out of the device. The burst counter always
starts with a '0' internally in the case of CY7C1316BV18 and
CY7C1916BV18. For CY7C1318BV18 and CY7C1320BV18,
the burst counter takes in the least significant bit of the external
address and bursts two 18-bit words (in the case of
CY7C1318BV18) of two 36-bit words (in the case of
CY7C1320BV18) sequentially into or out of the device.
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs (Q, sharing the same
physical pins as the data inputs, D) are tightly matched to the two
output echo clocks CQ/CQ, eliminating the need to capture data
separately from each individual DDR SRAM in the system
design. Output data clocks (C/C) enable maximum system
clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
250 MHz 200 MHz
250 200
705 575
710 580
730 600
775 635
,
• San Jose CA 95134-1709
167 MHz Unit
167 MHz
490 mA
490 mA
510 mA
540 mA
• 408-943-2600
Revised June 2, 2008
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