Toshiba TC9314F Manual page 63

Cmos digital integrated circuit silicon monolithic
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Key Return Output Ports
Characteristics
Output current
"H" level
Load resistance at N-channel
HOLD Input Port
Characteristics
Input leakage current
"H" level
Input voltage
"L" level
A/D Converter (AD
IN1
Characteristics
Analog input voltage
Analog reference voltage
Resolution
Total conversion error
Analog input leakage
Analog reference input current
Analog output voltage range
Analog output voltage deviation
DO1, DO2, MUTE, OT1 Output
Characteristics
"H" level
Output current
"L" level
Output off leakage current
General-Purpose I/O Ports
Characteristics
"H" level
Output current
"L" level
Input leakage current
"H" level
Input voltage
"L" level
(T0~T7)
Test
Symbol
Circuit
I
OH1
R
ON
Test
Symbol
Circuit
I
LI
V
IH3
V
IL3
, AD
,DC-REF)
In2
Test
Symbol
Circuit
V
AD
V
REF
V
RES
I
LI
I
REF
V
DAO
V
DA
Test
Symbol
Circuit
I
OH1
I
OL1
I
TL
(P1-0~P4-3)
Test
Symbol
Circuit
I
OH1
I
OL1
I
LI
V
IH2
V
IL2
Test Condition
= 4.5 V
V
OH
= 5.0 V
V
OL
Test Condition
= 5.0 V, V
= 0 V
V
IH
IL
Test Condition
AD
, AD
IN1
IN2
DC-REF
= 5.0 V, V
= 0 V (AD
V
IH
IL
IN1
AD
)
IN2
= 5.0 V (DC-REF)
V
IH
DA OUT
= ±100 µA, V
= 5 V,
I
DA
DD
Ta = 25°C
Test Condition
= 4.5 V
V
OH
= 0.5 V
V
OL
= 5.0 V, V
= 0 V
V
TLH
TLL
(DO1, DO2)
Test Condition
= 4.5 V
V
OH
= 0.5 V
V
OL
= 5.0 V, V
= 0 V
V
IH
IL
63
TC9314F
Min
Typ.
Max
−1.5
−3.0
75
150
300
Min
Typ.
Max
±1.0
V
DD
V
× 0.8
DD
V
DD
0
× 0.4
Min
Typ.
Max
0
~
V
DD
2.0
~
V
DD
6
±2.0
±3.0
,
±1.0
0.5
1.0
V
DD
0
− 1.0
±50
±100
Min
Typ.
Max
−1.5
−3.0
1.5
3.0
±100
Min
Typ.
Max
−1.5
−3.0
1.5
3.0
±1.0
V
DD
~
V
× 0.7
DD
V
DD
0
~
× 0.3
2003-07-03
Unit
mA
kΩ
Unit
µA
V
Unit
V
V
bit
LSB
µA
mA
V
mV
Unit
mA
nA
Unit
mA
µA
V

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