Sphere (12, 4); Solid State Devices (13) - HP 48gII Advanced User's Reference Manual

Sphere (12, 4)

Equations:
4
3
A = 4
V = -- - r
3
Example:
Given: d=14_cm, m=3.75_kg, Id=486.5_lb in^2.
Solution: r=21.4273_cm, V=41208.7268_cm^3, A=5769.5719_cm^2, I=0.0689_kg m^2.

Solid State Devices (13)

Variable Description
F
Forward common-base current gain
R
Reverse common-base current gain
Body factor
Modulation parameter
n
Electron mobility
p
Fermi potential
Length adjustment (PN Step Junctions), or
∆L
Channel encroachment (NMOS Transistors)
Width adjustment (PN Step Junctions), or
∆W
Width contraction (NMOS Transistors)
a
Channel thickness
Aj
Effective junction area
BV
Breakdown voltage
Cj
Junction capacitance per unit area
Cox
E1
Breakdown-voltage field factor
Emax
Maximum electric field
G0
Channel conductance
2
2 2
r -- - m r
I =
5
Silicon dioxide capacitance per unit area
2
Id = I + m d
Equation Reference 5-49