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Table 6: VB
BAT and GN
ND Pins
Pin Name
Pin No
o.
VBAT_RF
57,58
VBAT_BB
59,60
8,9,19,
,22,
36,46,
GND
48,50~
~54,56,
72, 85~
~112
3.6.2. De
ecrease Vo
oltage Dro
The power
supply rang
ge of the mo
below 3.3V
V. The follow
wing figure s
voltage drop
p will be less
s in 3G and
VBA
AT
Min.3.
3V
Figure 7: P
To decrease
e voltage dr
rop, a bypas
ceramic chi
ip (MLCC) c
capacitor ca
from an ext
ternal applic
cation has to
structure. T
The width of
f VBAT_BB
should be n
no less than
2mm.In prin
Three ceram
mic capacito
ors (100nF,
capacitors s
should be pl
aced close t
suggested t
that you sh
ould use a
power is mo
ore than 0.5W
W. The follo
E
EC25-A_Us
All manuals and user guides at all-guides.com
Description
n
Power supp
ply for modu
part.
Power supp
ply for modu
baseband p
part.
Ground.
op
odule is from
m 3.3Vto4.3
shows the v
voltage drop
4G network
ks.
Transmit
burst
Drop
Power Supp
ply Limits d
ss capacitor
r of about 10
an provide th
he best com
o be a single
e voltage so
trace shoul
d be no les
nciple, the lo
ongerthe VB
33pF, 10pF
F) are recom
to the VBAT
T pins. In add
zener diode
e of which
owing figure
shows the s
ser_ManualC
Confidentia
Mi
n.
Typ
p.
le RF
3.3
3
3.8
le
3.3
3
3.8
-
0
3V. Make su
re the input
t voltage wil
p during tra
ansmitting b
urst in 2G
Transmit
burst
Ripple
during Tran
nsmit Burst
00µF with lo
ow ESR sho
ould be used
mbination of
f low ESR. T
The main p
ource and ex
xpanded to
two sub pa
ss than 1mm
m; andthe w
width of VBA
AT trace is,
the wider it
will be.
mmended to
o be applied
d to the VBA
dition, in ord
er to get a s
stable power
reverse zen
ner voltage
is 5.1V and
star structure
e of the pow
wer supply.
al / Release
d
26 / 6
69
L
LTE Module
e
EC25-AU
ser Manua
al
Max
.
Unit
4.3
V
4.3
V
-
V
l never drop
p
network.The
e
d. Multi-laye
r
ower supply
y
ths with sta
r
AT_RF trace
e
AT pins. The
e
r source, it is
s
d dissipation
n
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