Samsung S3C9444 User Manual page 92

SAM88RCRI INSTRUCTION SET
LDC/LDE
— Load Memory
LDC/LDE (Continued)
Examples: Given: R0 = 11H, R1 = 34H, R2 = 01H, R3 = 04H, R4 = 00H, R5 = 60H; Program memory
locations 0061 = AAH, 0103H = 4FH, 0104H = 1A, 0105H = 6DH, and 1104H = 88H. External
data memory locations 0061H = BBH, 0103H = 5FH, 0104H = 2AH, 0105H = 7DH, and 1104H
= 98H:
LDC
LDE
(note)
LDC
LDE
LDC
LDE
(note)
LDC
LDE
LDC
LDE
LDC
LDE
(note)
LDC
LDE
NOTE: These instructions are not supported by masked ROM type devices.
6-30
; R0 ← contents of program memory location 0104H
R0,@RR2
; R0 = 1AH, R2 = 01H, R3 = 04H
; R0 ← contents of external data memory location 0104H
R0,@RR2
; R0 = 2AH, R2 = 01H, R3 = 04H
@RR2,R0 ; 11H (contents of R0) is loaded into program memory
; location 0104H (RR2),
; working registers R0, R2, R3 → no change
@RR2,R0 ; 11H (contents of R0) is loaded into external data memory
; location 0104H (RR2),
; working registers R0, R2, R3 → no change
; R0 ← contents of program memory location 0061H
R0,#01H[RR4]
; (01H + RR4),
; R0 = AAH, R2 = 00H, R3 = 60H
; R0 ← contents of external data memory location 0061H
R0,#01H[RR4]
; (01H + RR4), R0 = BBH, R4 = 00H, R5 = 60H
#01H[RR4],R0 ; 11H (contents of R0) is loaded into program memory location
; 0061H (01H + 0060H)
#01H[RR4],R0 ; 11H (contents of R0) is loaded into external data memory
; location 0061H (01H + 0060H)
R0,#1000H[RR2] ; R0 ← contents of program memory location 1104H
; (1000H + 0104H), R0 = 88H, R2 = 01H, R3 = 04H
R0,#1000H[RR2] ; R0 ← contents of external data memory location 1104H
; (1000H + 0104H), R0 = 98H, R2 = 01H, R3 = 04H
; R0 ← contents of program memory location 1104H, R0 = 88H
R0,1104H
; R0 ← contents of external data memory location 1104H,
R0,1104H
; R0 = 98H
1105H,R0 ; 11H (contents of R0) is loaded into program memory location
; 1105H, (1105H) ← 11H
1105H,R0 ; 11H (contents of R0) is loaded into external data memory
; location 1105H, (1105H) ← 11H
S3C9444/F9444_UM_REV1.10