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Summary of Contents for Infineon CoolSET-F3R ICE3BRXX65JZ series
- Page 1 A p p l i c a t i o n N o t e , V 2 . 2 , J u n e 2 0 1 0 I C E 3 B R x x 6 5 J ( Z ) ( G) ®...
- Page 2 Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system.
- Page 3 Subjects (major changes since last revision) Add ICE3BR4765JZ ® CoolSET -F3R (DIP-8, DIP-7 & DSO-16/12) new Jitter version Design Guide: License to Infineon Technologies Asia Pacific Pte Ltd AN-PS0025 Kyaw Zin Min Kok Siu Kam Eric We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document.
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Page 4: Table Of Contents
ICE3BRXX65J(Z)(G) Table of Contents Page Introduction ...........................5 List of Features ..........................5 Package............................5 Block Diagram ..........................7 Typical Application Circuit......................8 Functional description and component design .................9 Startup time .............................9 6.1.1 Vcc capacitor...........................9 Soft Start ............................10 Low standby power - Active Burst Mode..................10 6.3.1 Entering Active Burst Mode......................10 6.3.2... -
Page 5: Introduction
ICE3BRXX65J(Z)(G) Introduction ® ® The CoolSET -F3R, ICE3BRxx65J(Z)(G) is the latest development of the CoolSET -F3. It is a PWM controller with power MOSFET and startup cell in a DIP or DSO package. The switching frequency is running at 65 KHz and it targets for DVD player, set-top box, portable game console, auxiliary power supply, etc. The ICE3BRxx65J(Z)(G) adopts the BiCMOS technology and provides a wider Vcc operating range up to ®... - Page 6 ICE3BRXX65J(Z)(G) The package for F3R ICE3BRXX65JZ Jitter mode product is DIP-7. Name Description extended Blanking & Auto-restart enable FeedBack ® Current Sense / 650V CoolMOS Source n.c. Not connected ® Drain 650V CoolMOS Drain No Pin Controller Supply Voltage Controller Ground Figure 2 Pin configuration –...
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Page 7: Block Diagram
ICE3BRXX65J(Z)(G) Block Diagram Figure 4 Block Diagram of ICE3BRXX65J(Z)(G) Application Note 2010-06-20... -
Page 8: Typical Application Circuit
ICE3BRXX65J(Z)(G) Typical Application Circuit Figure 5 Typical application circuit with ICE3BR4765J 12W 5V Application Note 2010-06-20... -
Page 9: Functional Description And Component Design
ICE3BRXX65J(Z)(G) Functional description and component design Startup time Startup time is counted from applying input voltage to IC turn on. ICE3BRXX65J(Z)(G) has a startup cell which is connected to input bulk capacitor. When there is input voltage, the startup cell will act as a constant current source to charge up the Vcc capacitor and supply energy to the IC. -
Page 10: Soft Start
ICE3BRXX65J(Z)(G) Soft Start When the IC is turned on after the Startup time, a digital soft start circuit is activated. A gradually increased soft start voltage is generated by the digital soft start circuit, which in turn releases the duty cycle gradually from zero. -
Page 11: Working In Active Burst Mode
ICE3BRXX65J(Z)(G) Channel 1; C1 : Drain-Source Voltage (V Channel 2; C2 : Supply Voltage (V Channel 3; C3 : FB voltage (V 20ms Channel 4; C4 : BA Voltage (V Entering Active Burst mode with preset time 20ms when load changes from full to light @ Vin=85Vac Figure 8 Entering Burst Mode... -
Page 12: Leaving Active Burst Mode
ICE3BRXX65J(Z)(G) 6.3.3 Leaving Active Burst Mode When the output load increases to be higher than the maximum burst power, P will drop and V burst_max will rise up fast to exceed 4.0V. The system leaves burst mode immediately when V reaches 4.0V. -
Page 13: Low Emi Noise
ICE3BRXX65J(Z)(G) 6.3.4 Minimum V supply voltage during burst mode It is particularly important that the Vcc voltage must stay above V (i.e. 10.5V) Otherwise, the expected VCCoff low standby power cannot be achieved. The IC will go into auto-restart mode instead of Active Burst Mode. A reference Vcc circuit is presented in Figure 5. -
Page 14: Other Suggestions To Solve Emi Issue
ICE3BRXX65J(Z)(G) 6.4.3 Other suggestions to solve EMI issue Some more suggestions to improve the EMI performance and is listed below. 1. Add capacitor (C ) at the drain source pin: it can slow down the turn off speed of the MOSFET and the high ∆V/∆t noise will be reduced and so is the EMI noise. -
Page 15: Protection Features
ICE3BRXX65J(Z)(G) Protection Features The IC provides several protection features which lead to the Auto Restart Protection Mode. The following table shows the conditions of the system failure and the associate protection mode. Protection function Failure condition Protection Mode 1. Vcc > 25.5V or Vcc Over-voltage Auto Restart 2. -
Page 16: Blanking Time For Over Load Protection
ICE3BRXX65J(Z)(G) 6.6.2 Blanking Time for over load protection The IC controller provides a blanking window before entering into the auto restart mode due to output overload/short circuit. The purpose is to ensure that the system will not enter protection mode unintentionally. There are 2 kinds of the blanking time;... -
Page 17: User Defined Protection By External Protection Enable Pin
ICE3BRXX65J(Z)(G) 6.6.3 User defined protection by external protection enable pin Although there are lots of pre-defined Auto Restart Protection is implemented in the IC, customer still can have some tailor-made protection for the application needs by pulling down the BA pin to lower 0.33V. When BA pin lower than 0.33V, the gate drive switching will be stopped and IC will enter to auto restart mode until the external auto restart enable signal released. - Page 18 ICE3BRXX65J(Z)(G) 100 110 120 130 100 110 120 130 Ambient Temperature [°C] Ambient Temperature [°C] ICE3BR1765J : Vin=85Vac~265Vac ICE3BR1765J : Vin=230Vac±15% Figure 20 Input power curve for ICE3BR1765J 100 110 120 130 100 110 120 130 Ambient Temperature [°C] Ambient Temperature [°C] ICE3BR4765J : Vin=85Vac~265Vac ICE3BR4765J : Vin=230Vac±15% Figure 21...
- Page 19 ICE3BRXX65J(Z)(G) ICE3BR1765JZ : Vin=85Vac~265Vac ICE3BR1765JZ : Vin=230Vac±15% Figure 23 Input power curve for ICE3BR1765JZ ICE3BR4765JZ : Vin=85Vac~265Vac ICE3BR4765JZ : Vin=230Vac±15% Figure 24 Input power curve for ICE3BR4765JZ 100 110 120 130 100 110 120 130 Ambient Temperature [°C] Ambient Temperature [°C] ICE3BR4765JG : Vin=85Vac~265Vac ICE3BR4765JG : Vin=230Vac±15% Figure 25...
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Page 20: Layout Recommendation
ICE3BRXX65J(Z)(G) The major assumption for the calculation is listed below. 1. Reflection voltage from secondary side to primary side is 100V. 2. The maximum power for the device is estimated when the junction temperature of the integrated ® CoolMOS reaches 125°C. (With some margins to reach the over temperature protection of the device : 130°C). -
Page 21: Useful Formula & External Component Design
ICE3BRXX65J(Z)(G) Useful formula & external component design Transformer calculation (DCM flyback) = 90Vdc, V = 380Vdc, in_min in_max Input data = 470V for 600V MOSFET, ds_max ≤ 50% − Turn ratio ratio diode ⋅ diode ratio Maximum Duty ratio ⋅ diode ratio ⋅... -
Page 22: References
-F3R ICE3BR4765JG Off-Line SMPS Current Mode ® Controller with Integrated 650V CoolMOS and Startup Cell (frequency jitter mode) in DSO-16/12” Eric Kok Siu Kam, Kyaw Zin Min, Infineon Technologies, Application Note “AN-EVALSF3- ® ICE3BR4765J, 12W 5.0V SMPS Evaluation Board with CoolSET -F3R ICE3BR4765J”...
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