Overview; Features; Applications - Texas Instruments ISO5852SDWEVM-017 User Manual

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Overview

The ISO5852SDWEVM-017 is a compact, dual channel isolated gate driver board providing drive, bias
voltages, protection and diagnostic needed for half-bridge SiC MOSFET and Si IGBT Power Modules
housed in 150-mm × 62-mm × 17-mm packages.
This TI EVM is based on 5.7-kVrms reinforced isolation driver IC ISO5852SDW in SOIC-16DW package
with 8.0 mm creepage and clearance. The EVM includes SN6505B based isolated DC-DC transformer
bias supplies.
Isolated temperature and input rail monitoring is provided by 5-kVrms isolated amplifiers AMC1301.
Compact form factor 100-mm × 62-mm × 6.6-mm, excluding connector height, allows direct connection to
standard 62-mm half-bridge modules.
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Features

This EVM supports the following features:
• 20-A peak split sink and source drive current to optimize turn on and turn off switching time
• Two, 2-W output bias supplies with undervoltage lockout (UVLO) and overvoltage lockout (OVLO)
protection
• Turn ON and turn OFF drive voltages can be programmed independently from 12 V to 21 V and from
–3.3 V to –7 V respectively by using two input supplies from 3.3 V to 5.3 V
• Robust noise-immune solution with CMTI >100 V/ns
• Supports 5-kVrms Reinforced Isolation for input rail up to 1700-V
• Programmable Short-circuit sensing and Soft Turn-OFF protection by de-saturation circuit
• 2-A Active Miller Clamp
• Output Short Circuit Clamp
• Fault feedback with reset
• Temperature and input rail monitoring
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Applications

This EVM is used in the following applications:
• Solar inverters
• Motor drives
• HEV and EV chargers
• Wind turbines
• Transportation
• UPS
SLLU298 – May 2018
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ISO5852SDW Driving and Protecting SiC and IGBT Power Modules
Copyright © 2018, Texas Instruments Incorporated
Overview
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