Texas Instruments ISO5852SDWEVM-017 User Manual page 5

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SHORT CIRCUIT PROTECTION
VDESAT Nominal desaturation threshold
TDESATBLN
Blanking time
K
TDS90 Response time to 90% VOUTHL
TDS10 Response time to 10% VOUTHL
ICHARGE Capacitor charge current
IDISCHARGE Capacitor discharge current
VCLAMP Miller clamp threshold
ICLAMP Miller clamp current
ISOLATION
CMTI
VISO Withstand isolation voltage
CI Barrier capacitance
TA Operating Ambient Temperature
SIZE
Board size
SLLU298 – May 2018
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Table 1. Electrical Specifications (continued)
PARAMETER
Copyright © 2018, Texas Instruments Incorporated
TEST CONDITION
Can be
programmed by
resistors down to 4
V
CLOAD = 10nF
CLOAD = 10nF
CMTI
Reinforced, 60s
Without connector
ISO5852SDW Driving and Protecting SiC and IGBT Power Modules
Overview
MIN NOM MAX
8.3 9.0 9.5
310 400 480
553 760
2 3.5
0.42 0.5 0.58
9 14
1.6 2.1 2.5
4
100
5.0
20
-40 25 125
100 x 62 x 6.6
UNIT
V
ns
ns
µs
mA
mA
V
A
V/ns
kVrms
pF
oC
mm
5