GE 750 Instruction Manual page 378

16.4 MODBUS MEMORY MAP
Table 16–16: MODBUS MEMORY MAP DATA FORMATS (Sheet 11 of 24)
TYPE VALUE / BIT
MASK
7
8
9
10
11
12
13
14
15
16
17
7
18
7
19
7
20
F25
16
F26
0
1
2
3
4
5
6
7
8
9
3
10
F27
0
1
1 2 3 4 5 6 7 8 9
For explanation of Table footnotes, see page 16–83.
16-
70
Courtesy of NationalSwitchgear.com
DESCRIPTION
Internal RS485
Internal Temperature
Clock Not Set
Prototype Software
Not Calibrated
Force Relays
Force Analog Out
Simulation Mode
Pickup Test
Factory Service Mode
IRIG-B Failure
Not Used
Not Used
RTC Crystal
2's COMPLEMENT SIGNED VALUE
To convert phase currents to Amps, multiply by 'Phase CT Primary' and divide by 1000.
To convert ground current to Amps, multiply by 'Ground CT Primary' and divide by 1000.
To convert sensitive ground current to Amps, multiply by 'Sensitive Ground CT Primary' and
divide by 10000.
To convert to voltages to Volts, multiply by 'VT Ratio', multiply by 'VT Secondary Voltage' and
divide by 1000.
TRACE MEMORY CHANNEL SELECTOR
The contents of the Trace Memory Samples depends on the value contained in the Trace
Memory Channel Selector as follows:
DATA CHANNEL TYPE
Phase A Current F25
Phase B Current F25
Phase C Current F25
Ground Current F25
A-N (A-B) Voltage F25
B-N Voltage F25
C-N (C-B) Voltage F25
Line Voltage F25
Output Relay States F40
Logic Input States F46
Sensitive Ground Current F25
COMMUNICATIONS PARITY
None
Odd
750/760 Feeder Management Relay
16 COMMUNICATIONS
GE Power Management