Product Description; Drive Features; View Of The Drive With And Without The Bezel - IBM TotalStorage Ultrium T800 Operator's Manual

Product Description

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Drive Features

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© Copyright IBM Corp. 2004, 2005
The IBM TotalStorage Ultrium Tape Drive is a high-performance, high-capacity
data-storage device that is designed to backup and restore open systems
applications. The drive can be integrated into an enclosure, such as a desktop unit,
tape autoloader, or tape library. The drive is the third-generation in the Ultrium
series of products. It is available as Model T800 with a Small Computer Systems
Interface (SCSI) or as Model T800F with a Fibre Channel interface.
Figure 2. View of the drive with and without the bezel
The drive offers the following features:
v Ultra160 Low Voltage Differential (LVD) Small Computer Systems Interface or
FC-2 Fibre Channel interface
v 68-pin, D-shell connector (for SCSI signals, SCSI ID selection, and power
connection) or connector for direct conection to a n F-port
v Native storage capacity of 400 GB per cartridge (800 GB at 2:1 compression)
v Native data transfer rate of up to 80 MB per second
v Burst data transfer rate of 160 MB per second
v New dual stage 16 channel head activator for precision head alignment to help
support higher track density with improved data integrity and backwards
compatibility with previous LTO generations
v Graceful dynamic braking designed to maintain tension until the tape comes to
a complete stop, to help prevent stretching or breaking the tape, and loose tape
wraps
v Larger internal buffer (the size has been doubled over the Ultrium 2 to 128 MB)
v New independent tape loader and threader motors designed to help with
cartridge insertion in the tape drive.
v Highly integrated electronics using IBM engineered copper technology designed
to reduced the total number of components in the drive, lower chip
temperatures, and reduce power requirements, helping to provide for a more
reliable drive. The Generation 3 drive electronics also incorporate on-the-fly
error correction of soft errors in the memory arrays in data and control paths.
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