Cypress Semiconductor CY7C1298H Specification Sheet

Cypress 1-mbit (64k x 18) pipelined dcd sync sram specification sheet

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Features
• Registered inputs and outputs for pipelined operation
• Optimal for performance (Double-Cycle deselect)
— Depth expansion without wait state
• 64K × 18-bit common I/O architecture
• 3.3V core power supply (V
• 2.5V/3.3V I/O power supply (V
• Fast clock-to-output times
— 3.5 ns (for 166-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel
®
Pentium
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous Output Enable
• Available in JEDEC-standard lead-free 100-Pin TQFP
package
• "ZZ" Sleep Mode option
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05665 Rev. *B
1-Mbit (64K x 18) Pipelined DCD Sync SRAM
)
DD
)
DDQ
®
198 Champion Court
Functional Description
The CY7C1298H SRAM integrates 64K x 18 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
), depth-expansion Chip Enables (CE
1
Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW
, and BWE), and Global Write (GW). Asynchronous
[A:B]
inputs include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two bytes wide as
controlled by the byte write control inputs. GW active LOW
causes all bytes to be written. This device incorporates an
additional pipelined enable register which delays turning off
the output buffers an additional cycle when a deselect is
executed.This feature allows depth expansion without penal-
izing system performance.
The CY7C1298H operates from a +3.3V core power supply
while all outputs operate either with a +2.5V or +3.3V supply.
All
inputs
and
outputs
JESD8-5-compatible.
166 MHz
3.5
240
40
,
San Jose
CA 95134-1709
CY7C1298H
[1]
and CE
), Burst
2
3
are
JEDEC-standard
133 MHz
Unit
4.0
ns
225
mA
40
mA
408-943-2600
Revised July 5, 2006
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Summary of Contents for Cypress Semiconductor CY7C1298H

  • Page 1 Cypress Semiconductor Corporation Document #: 38-05665 Rev. *B Functional Description The CY7C1298H SRAM integrates 64K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK).
  • Page 2: Functional Block Diagram

    WRITE REGISTER BYTE WRITE REGISTER ENABLE REGISTER SLEEP CONTROL Document #: 38-05665 Rev. *B [1:0] LOGIC BYTE WRITE DRIVER MEMORY ARRAY BYTE WRITE DRIVER PIPELINED ENABLE CY7C1298H OUTPUT OUTPUT SENSE BUFFERS REGISTERS AMPS INPUT REGISTERS Page 2 of 16 [+] Feedback...
  • Page 3: Pin Configurations

    Pin Configurations Document #: 38-05665 Rev. *B 100-Pin TQFP Top View CY7C1298H CY7C1298H Page 3 of 16 [+] Feedback...
  • Page 4: Pin Descriptions

    CE is sampled only when a new external address is is deasserted HIGH. are placed in a tri-state condition. CY7C1298H , and CE are sampled active. A [1:0] and BWE).
  • Page 5: Functional Overview

    Because the CY7C1298H is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ inputs. Doing so will tri-state the output drivers. As a safety precaution, DQ are automatically tri-stated whenever a write cycle is detected, regardless of the state of OE.
  • Page 6: Truth Table

    First Address Fourth A1, A0 Address A1, A0 ZZ ADSP ADSC ) and BWE = L or GW = L. WRITE = H when all Byte write enable signals (BW CY7C1298H Second Third Fourth Address Address Address A1, A0 A1, A0...
  • Page 7 ZZ inactive to exit Sleep current RZZI Document #: 38-05665 Rev. *B Test Conditions − 0.2V ZZ > V − 0.2V ZZ > V ZZ < 0.2V This parameter is sampled This parameter is sampled CY7C1298H Min. Max. Unit Page 7 of 16 [+] Feedback...
  • Page 8: Maximum Ratings

    V , f = 0 /2), undershoot: V (AC)> –2V (Pulse width less than t (min.) within 200 ms. During this time V < V and V CY7C1298H + 0.5V Ambient 3.3V −5%/+10% 2.5V −5% to V Min. Max.
  • Page 9 5 pF R = 351Ω INCLUDING JIG AND SCOPE R = 1667Ω 2.5V OUTPUT 5 pF R =1538Ω INCLUDING JIG AND SCOPE CY7C1298H 100 TQFP Max. Unit 100 TQFP Package Unit 30.32 °C/W 6.85 °C/W ALL INPUT PULSES ≤ 1 ns ≤...
  • Page 10: Switching Characteristics

    [11, 12, 13] Set-up Before CLK Rise Hold After CLK Rise and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ = 2.5V. CY7C1298H 166 MHz 133 MHz Min. Max. Min. Max. Unit...
  • Page 11: Switching Waveforms

    Q(A2 + 1) Q(A2 + 2) Q(A1) BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH, CE CY7C1298H Burst continued with new base address Deselect cycle t CHZ Q(A2 + 3) Q(A2) Q(A2 + 1)
  • Page 12 ADV suspends burst D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) BURST WRITE DON’T CARE UNDEFINED LOW. [A:B] CY7C1298H ADSC extends burst t ADS t ADH t WES t WEH t ADVS t ADVH D(A2 + 3) D(A3)
  • Page 13 Document #: 38-05665 Rev. *B t WES t WEH t DS t DH t OELZ D(A3) t OEHZ Q(A4) Single WRITE BURST READ UNDEFINED DON’T CARE CY7C1298H D(A5) D(A6) Q(A4+1) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page 13 of 16 [+] Feedback...
  • Page 14 20. Device must be deselected when entering ZZ mode. See truth table for all possible signal conditions to deselect the device. 21. I/Os are in High-Z when exiting ZZ sleep mode. Document #: 38-05665 Rev. *B t ZZREC t RZZI DESELECT or READ Only High-Z DON’T CARE CY7C1298H Page 14 of 16 [+] Feedback...
  • Page 15: Ordering Information

    Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit Speed Package (MHz) Ordering Code Diagram CY7C1298H-100AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1298H-100AXI CY7C1298H-133AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1298H-133AXI Package Diagram 100-Pin TQFP (14 x 20 x 1.4 mm) (51-85050)
  • Page 16 Document History Page Document Title: CY7C1298H 1-Mbit (64K x 18) Pipelined DCD Sync SRAM Document Number: 38-05665 REV. ECN NO. Issue Date 343896 See ECN 430678 See ECN 481916 See ECN Document #: 38-05665 Rev. *B Orig. of Change Description of Change...

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