Cypress Semiconductor CY7C1217H Specification Sheet

Cypress 1-mbit (32k x 36) flow-through sync sram specification sheet

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Features
• 32K x 36 common I/O
• 3.3V core power supply (V
• 2.5V/3.3V I/O power supply (V
• Fast clock-to-output times
— 6.5 ns (for 133-MHz version)
• Provide high-performance 2-1-1-1 access rate
• User-selectable burst counter supporting Intel
®
Pentium
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Available in JEDEC-standard lead-free 100-Pin TQFP
package
• "ZZ" Sleep Mode option
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum Standby Current
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05670 Rev. *B
1-Mbit (32K x 36) Flow-Through Sync SRAM
)
DD
)
DDQ
®
198 Champion Court
Functional Description
The CY7C1217H is a 32K x 36 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
), depth-expansion Chip Enables (CE
1
Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW
, and BWE), and Global Write (GW). Asynchronous
[A:D]
inputs include the Output Enable (OE) and the ZZ pin.
The CY7C1217H allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects
an interleaved burst sequence, while a LOW selects a linear
burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP) or the cache Controller
Address Strobe (ADSC) inputs. Address advancement is
controlled by the Address Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1217H operates from a +3.3V core power supply
while all outputs may operate either with a +2.5V or +3.3V
supply. All inputs and
outputs
JESD8-5-compatible.
133 MHz
6.5
225
40
,
San Jose
CA 95134-1709
CY7C1217H
[1]
and CE
), Burst
2
3
are
JEDEC-standard
100 MHz
Unit
8.0
ns
205
mA
40
mA
408-943-2600
Revised July 6, 2006
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Summary of Contents for Cypress Semiconductor CY7C1217H

  • Page 1 Document #: 38-05670 Rev. *B 1-Mbit (32K x 36) Flow-Through Sync SRAM Functional Description The CY7C1217H is a 32K x 36 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version).
  • Page 2: Logic Block Diagram

    REGISTER SLEEP CONTROL Document #: 38-05670 Rev. *B [1:0] BURST COUNTER AND LOGIC BYTE WRITE REGISTER BYTE WRITE REGISTER BYTE WRITE REGISTER BYTE WRITE REGISTER CY7C1217H OUTPUT MEMORY SENSE BUFFERS ARRAY AMPS INPUT REGISTERS Page 2 of 16 [+] Feedback...
  • Page 3: Pin Configuration

    Pin Configuration BYTE C BYTE D Document #: 38-05670 Rev. *B 100-Pin TQFP CY7C1217H CY7C1217H BYTE B BYTE A Page 3 of 16 [+] Feedback...
  • Page 4: Pin Descriptions

    CE and CE to select/deselect the device. CE is deasserted HIGH are placed in a tri-state condition. [A:D] CY7C1217H , CE , and CE are sampled active. [A:D] is HIGH. CE is sampled only when a new external...
  • Page 5: Functional Overview

    Maximum access delay from the clock rise (t ) is 6.5 ns (133-MHz device). The CY7C1217H supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486™...
  • Page 6: Truth Table

    This parameter is sampled ZZ ADSP ADSC , BW , BW , BW ) and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals CY7C1217H Min. Max. Unit WRITE OE CLK Tri-State Tri-State...
  • Page 7 , DQP Write Bytes (D, B, A, DQP , DQP , DQP Write Bytes (D, C, A, DQP , DQP , DQP Write All Bytes Write All Bytes Document #: 38-05670 Rev. *B CY7C1217H Page 7 of 16 [+] Feedback...
  • Page 8: Maximum Ratings

    ≤ 0.3V, – 0.3V or V /2), undershoot: V (AC) > –2V (Pulse width less than t (min.) within 200 ms. During this time V < V and V CY7C1217H + 0.5V Ambient Temperature ° ° C to +70 3.3V 2.5V –5%...
  • Page 9 5 pF R = 351Ω INCLUDING JIG AND SCOPE R = 1667Ω 2.5V OUTPUT 5 pF R =1538Ω INCLUDING JIG AND SCOPE CY7C1217H 100 TQFP Max. Unit = 2.5V 100 TQFP Package Unit °C/W 30.32 °C/W 6.85 ALL INPUT PULSES ≤...
  • Page 10: Switching Characteristics

    = 2.5V. is the time that the power needs to be supplied above V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CY7C1217H 133 MHz 100 MHz Min. Max. Min. Max.
  • Page 11: Timing Diagrams

    Q(A2 + 1) Q(A2 + 2) BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH, CE CY7C1217H Deselect Cycle t CHZ Q(A2 + 3) Q(A2) Q(A2 + 1) Q(A2 + 2) Burst wraps around...
  • Page 12 ADV suspends burst. D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) BURST WRITE DON’T CARE UNDEFINED LOW. [A:D] CY7C1217H t ADS t ADH t WES t WEH t ADVS t ADVH D(A2 + 3) D(A3) D(A3 + 1)
  • Page 13 19. GW is HIGH. Document #: 38-05670 Rev. *B t DS t DH t OELZ D(A3) t CDV Q(A4) Q(A4+1) Single WRITE BURST READ DON’T CARE UNDEFINED CY7C1217H D(A5) D(A6) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page 13 of 16 [+] Feedback...
  • Page 14 20. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 21. DQs are in High-Z when exiting ZZ sleep mode. Document #: 38-05670 Rev. *B t ZZREC t RZZI DESELECT or READ Only High-Z DON’T CARE CY7C1217H Page 14 of 16 [+] Feedback...
  • Page 15: Ordering Information

    Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit Speed Package (MHz) Ordering Code Diagram CY7C1217H-100AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1217H-100AXI CY7C1217H-133AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1217H-133AXI Package Diagram 100-Pin TQFP (14 x 20 x 1.4 mm) (51-85050)
  • Page 16 Document History Page Document Title: CY7C1217H 1-Mbit (32K x 36) Flow-Through Sync SRAM Document Number: 38-05670 REV. ECN NO. Issue Date 345879 See ECN 430677 See ECN 482139 See ECN Document #: 38-05670 Rev. *B Orig. of Change Description of Change...

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