Cypress Semiconductor CY7C1297H Specification Sheet

Cypress 1-mbit (64k x 18) flow-through sync sram specification sheet

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Features
• 64K x 18 common I/O
• 3.3V core power supply (V
• 2.5V/3.3V I/O power supply (V
• Fast clock-to-output times
— 6.5 ns (for 133-MHz version)
• Provide high-performance 2-1-1-1 access rate
• User-selectable burst counter supporting Intel
®
Pentium
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Available in JEDEC-standard lead-free 100-Pin TQFP
package
• "ZZ" Sleep Mode option
Logic Block Diagram
A0,A1,A
MODE
ADV
CLK
ADSC
ADSP
BW
B
BW
A
BWE
GW
CE
1
CE
2
CE
3
OE
ZZ
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05669 Rev. *B
1-Mbit (64K x 18) Flow-Through Sync SRAM
)
DD
)
DDQ
®
ADDRESS
REGISTER
A[1:0]
Q1
BURST
COUNTER AND
LOGIC
CLR
Q0
DQ
,DQP
B
B
WRITE REGISTER
DQ
,DQP
A
A
WRITE REGISTER
ENABLE
REGISTER
SLEEP
CONTROL
198 Champion Court
Functional Description
The CY7C1297H is a 64K x 18 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
( CE
) , depth-expansion Chip Enables (CE
1
Control inputs ( ADSC , ADSP , and ADV ) , Write Enables
(BW
, and BWE), and Global Write (GW). Asynchronous
[A:B]
inputs include the Output Enable (OE) and the ZZ pin.
The CY7C1297H allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects
an interleaved burst sequence, while a LOW selects a linear
burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP) or the cache Controller
Address Strobe (ADSC) inputs. Address advancement is
controlled by the Address Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1297H operates from a +3.3V core power supply
while all outputs may operate either with a +2.5V or +3.3V
supply. All inputs and
outputs
JESD8-5-compatible.
DQ
,DQP
B
B
WRITE DRIVER
MEMORY
ARRAY
DQ
,DQP
A
A
WRITE DRIVER
,
San Jose
CA 95134-1709
CY7C1297H
[1]
and CE
), Burst
2
3
are
JEDEC-standard
OUTPUT
DQs
SENSE
BUFFERS
AMPS
DQP
DQP
INPUT
REGISTERS
408-943-2600
Revised July 6, 2006
A
B
[+] Feedback

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Summary of Contents for Cypress Semiconductor CY7C1297H

  • Page 1 Document #: 38-05669 Rev. *B 1-Mbit (64K x 18) Flow-Through Sync SRAM Functional Description The CY7C1297H is a 64K x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version).
  • Page 2: Selection Guide

    Selection Guide Maximum Access Time Maximum Operating Current Maximum Standby Current Pin Configuration BYTE B Document #: 38-05669 Rev. *B 133 MHz 100-Pin TQFP CY7C1297H CY7C1297H 100 MHz Unit BYTE A Page 2 of 15 [+] Feedback...
  • Page 3: Pin Descriptions

    CE is sampled only when a new external address is is deasserted HIGH are placed in a tri-state condition. [A:B] CY7C1297H , CE , and CE are sampled active. A [1:0] and BWE).
  • Page 4: Functional Overview

    Write cycle is detected, regardless of the state of OE. Burst Sequences The CY7C1297H provides an on-chip two-bit wraparound burst counter inside the SRAM. The burst counter is fed by A and can follow either a linear or interleaved burst order. The burst order is determined by the state of the MODE input.
  • Page 5: Truth Table

    This parameter is sampled ZZ ADSP ADSC ADV WRITE OE , BW ) and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals (BW [A: B] CY7C1297H Min. Max. Unit Tri-State Tri-State Tri-State...
  • Page 6 [2, 3] Truth Table for Read/Write Function Read Read Write Byte (A, DQP Write Byte (B, DQP Write All Bytes Write All Bytes Document #: 38-05669 Rev. *B CY7C1297H Page 6 of 15 [+] Feedback...
  • Page 7: Maximum Ratings

    ≤ 0.3V, – 0.3V or V /2), undershoot: V (AC) > –2V (Pulse width less than t (min.) within 200 ms. During this time V < V and V CY7C1297H + 0.5V Ambient Temperature ° ° C to +70 3.3V 2.5V –5%...
  • Page 8 5 pF R = 351Ω INCLUDING JIG AND SCOPE R = 1667Ω 2.5V OUTPUT 5 pF R =1538Ω INCLUDING JIG AND SCOPE CY7C1297H 100 TQFP Max. Unit 100 TQFP Package Unit °C/W 30.32 °C/W 6.85 ALL INPUT PULSES ≤ 1 ns ≤...
  • Page 9: Switching Characteristics

    [13, 14, 15] is the time that the power needs to be supplied above V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CY7C1297H 133 MHz 100 MHz Min. Max. Min.
  • Page 10: Timing Diagrams

    Q(A2 + 1) Q(A2 + 2) BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH, CE CY7C1297H Deselect Cycle t CHZ Q(A2 + 3) Q(A2) Q(A2 + 1) Q(A2 + 2) Burst wraps around...
  • Page 11 ADV suspends burst. D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) BURST WRITE DON’T CARE UNDEFINED LOW. [A:B] CY7C1297H t ADS t ADH t WES t WEH t ADVS t ADVH D(A2 + 3) D(A3) D(A3 + 1)
  • Page 12 19. GW is HIGH. Document #: 38-05669 Rev. *B t DS t DH t OELZ D(A3) t CDV Q(A4) Q(A4+1) Single WRITE BURST READ DON’T CARE UNDEFINED CY7C1297H D(A5) D(A6) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page 12 of 15 [+] Feedback...
  • Page 13 20. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 21. DQs are in High-Z when exiting ZZ sleep mode. Document #: 38-05669 Rev. *B t ZZREC t RZZI DESELECT or READ Only High-Z DON’T CARE CY7C1297H Page 13 of 15 [+] Feedback...
  • Page 14: Ordering Information

    Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit Speed Package (MHz) Ordering Code Diagram CY7C1297H-100AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1297H-100AXI CY7C1297H-133AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1297H-133AXI Package Diagram 100-Pin TQFP (14 x 20 x 1.4 mm) (51-85050)
  • Page 15: Document History

    Document History Document Title: CY7C1297H 1-Mbit (64K x 18) Flow-Through Sync SRAM Document Number: 38-05669 REV. ECN NO. Issue Date 345879 See ECN 430677 See ECN 482139 See ECN Document #: 38-05669 Rev. *B Orig. of Change Description of Change...

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