Cypress Semiconductor CY7C1218H Specification Sheet

Cypress 1-mbit (32k x36) pipelined sync sram specification sheet

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Features
• Registered inputs and outputs for pipelined operation
• 32K × 36 common I/O architecture
• 3.3V core power supply (V
• 2.5V/3.3V I/O power supply (V
• Fast clock-to-output times
— 3.5 ns (for 166-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel
Pentium interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Available in JEDEC-standard lead-free 100-Pin TQFP
package
• "ZZ" Sleep Mode Option
Logic Block Diagram
A0, A1, A
MODE
ADV
CLK
ADSC
ADSP
DQ
BW
D
WRITE REGISTER
DQ
BYTE
BW
C
WRITE REGISTER
DQ
BW
B
WRITE REGISTER
DQ
BW
A
WRITE REGISTER
BWE
GW
CE
1
CE
2
CE
3
OE
SLEEP
ZZ
CONTROL
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05667 Rev. *B
1-Mbit (32K x36) Pipelined Sync SRAM
)
DD
)
DDQ
®
ADDRESS
REGISTER
2
A
[1:0]
Q1
BURST
COUNTER
AND
CLR
Q0
LOGIC
DQ
D,
D
BYTE
,DQP
C
C
DQP
B,
B
BYTE
,DQP
A
A
BYTE
ENABLE
PIPELINED
REGISTER
ENABLE
198 Champion Court
Functional Description
The CY7C1218H SRAM integrates 32K x 36 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
), depth-expansion Chip Enables (CE
1
Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW
, and BWE), and Global Write (GW). Asynchronous
[A:D]
inputs include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the Byte Write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1218H operates from a +3.3V core power supply
while all outputs may operate either with a +2.5V or +3.3V
supply. All inputs and
JESD8-5-compatible.
DQ
,DQP
D
D
BYTE
WRITE DRIVER
DQ
,DQP
C
C
BYTE
WRITE DRIVER
MEMORY
SENSE
ARRAY
AMPS
DQ
DQP
B,
B
BYTE
WRITE DRIVER
DQ
DQP
A,
A
BYTE
WRITE DRIVER
,
San Jose
CA 95134-1709
CY7C1218H
[1]
and CE
), Burst
2
3
outputs
are
JEDEC-standard
DQs
OUTPUT
DQP
OUTPUT
BUFFERS
REGISTERS
DQP
E
DQP
DQP
INPUT
REGISTERS
408-943-2600
Revised July 6, 2006
A
B
C
D
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Summary of Contents for Cypress Semiconductor CY7C1218H

  • Page 1 Document #: 38-05667 Rev. *B 1-Mbit (32K x36) Pipelined Sync SRAM Functional Description The CY7C1218H SRAM integrates 32K x 36 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK).
  • Page 2: Pin Configuration

    Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Pin Configuration BYTE C BYTE D Document #: 38-05667 Rev. *B 166 MHz 100-Pin TQFP Top View CY7C1218H CY7C1218H 133 MHz Unit BYTE B BYTE A Page 2 of 16 [+] Feedback...
  • Page 3: Pin Definitions

    ADSP is ignored if CE to select/deselect the device. CE is sampled only when a new external address is to select/deselect the device. Not connected for BGA. Where referenced, CE CY7C1218H , CE , and CE are sampled active. A and BWE).
  • Page 4: Functional Overview

    A synchronous self-timed Write mechanism has been provided to simplify the Write operations. Because the CY7C1218H is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ inputs. Doing so will tri-state the output drivers. As a safety precaution, DQ are automatically tri-stated whenever a Write cycle is detected, regardless of the state of OE.
  • Page 5 – 0.2V ZZ < 0.2V This parameter is sampled This parameter is sampled ADSP ADSC ) and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals CY7C1218H Second Third Fourth Address Address Address Min.
  • Page 6: Truth Table

    Write Bytes D, B, A Write Bytes D, C Write Bytes D, C, A Write Bytes D, C, B Write All Bytes Write All Bytes Document #: 38-05667 Rev. *B ADSP ADSC CY7C1218H Write Tri-State Write Tri-State Write Tri-State Write Tri-State...
  • Page 7: Maximum Ratings

    V , f = 0 /2), undershoot: V (AC) > –2V (Pulse width less than t (min.) within 200 ms. During this time V < V and V CY7C1218H + 0.5V Ambient 3.3V –5%/+10% 2.5V –5% to V Min.
  • Page 8 5 pF R = 351Ω INCLUDING JIG AND SCOPE R = 1667Ω 2.5V OUTPUT 5 pF R =1538Ω INCLUDING JIG AND SCOPE CY7C1218H 100 TQFP Max. Unit 100 TQFP Package Unit 30.32 °C/W 6.85 °C/W ALL INPUT PULSES ≤ 1 ns ≤...
  • Page 9: Switching Characteristics

    = 2.5V. is the time that the power needs to be supplied above V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CY7C1218H 166 MHz 133 MHz Max. Min. Max. Unit...
  • Page 10: Switching Waveforms

    Q(A2 + 1) Q(A2 + 2) Q(A1) BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH, CE CY7C1218H Burst continued with new base address Deselect cycle t CHZ Q(A2 + 3) Q(A2) Q(A2 + 1)
  • Page 11 ADV suspends burst D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) BURST WRITE DON’T CARE UNDEFINED LOW. [A: D] CY7C1218H ADSC extends burst t ADS t ADH t WES t WEH ADVS ADVH D(A2 + 3) D(A3) D(A3 + 1)
  • Page 12 20. GW is HIGH. Document #: 38-05667 Rev. *B t WES t WEH t DS t DH t OELZ D(A3) Q(A4) Q(A4+1) Single WRITE BURST READ DON’T CARE UNDEFINED CY7C1218H D(A5) D(A6) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page 12 of 16 [+] Feedback...
  • Page 13 21. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 22. DQs are in High-Z when exiting ZZ sleep mode. Document #: 38-05667 Rev. *B ZZREC t RZZI DESELECT or READ Only High-Z DON’T CARE CY7C1218H Page 13 of 16 [+] Feedback...
  • Page 14: Ordering Information

    Speed Package (MHz) Ordering Code Diagram CY7C1218H-100AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1218H-100AXI CY7C1218H-133AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1218H-133AXI Document #: 38-05667 Rev. *B www.cypress.com...
  • Page 15: Package Diagram

    2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS CY7C1218H 1.40±0.05 12°±1° SEE DETAIL (8X) 0.20 MAX.
  • Page 16 Document History Page Document Title: CY7C1218H 1-Mbit (32K x36) Pipelined Sync SRAM Document Number: 38-05667 REV. ECN NO. Issue Date 343896 See ECN 430678 See ECN 481916 See ECN Document #: 38-05667 Rev. *B Orig. of Change Description of Change...

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