Cypress Semiconductor CY7C1223H Specification Sheet

Cypress 2-mbit (128k x 18) pipelined dcd sync sram specification sheet

Advertisement

Quick Links

Features
• Registered inputs and outputs for pipelined operation
• Optimal for performance (Double-Cycle deselect)
— Depth expansion without wait state
• 128K × 18-bit common I/O architecture
• 3.3V core power supply
• 3.3V/2.5V I/O supply
• Fast clock-to-output time
— 3.5 ns (for 166-MHz device)
— 4.0 ns (for 133-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel
®
Pentium
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous Output Enable
• Offered in JEDEC-standard lead-free 100-pin TQFP
package
• "ZZ" Sleep Mode option
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05674 Rev. *B
2-Mbit (128K x 18) Pipelined DCD Sync SRAM
®
198 Champion Court
Functional Description
The CY7C1223H SRAM integrates 128K x 18 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
), depth-expansion Chip Enables (CE
1
Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW
and BWE), and Global Write (GW). Asynchronous
[A:B]
inputs include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two bytes wide as
controlled by the byte write control inputs. GW active LOW
causes all bytes to be written. This device incorporates an
additional pipelined enable register which delays turning off
the output buffers an additional cycle when a deselect is
executed.This feature allows depth expansion without penal-
izing system performance.
The CY7C1223H operates from a +3.3V core power supply
while all outputs operate with either a +3.3V/2.5V supply. All
inputs and outputs are JEDEC-standard JESD8-5-compatible.
166 MHz
3.5
240
40
,
San Jose
CA 95134-1709
CY7C1223H
[1]
and CE
), Burst
2
3
133 MHz
Unit
4.0
ns
225
mA
40
mA
408-943-2600
Revised February 6, 2006
[+] Feedback

Advertisement

Table of Contents
loading
Need help?

Need help?

Do you have a question about the CY7C1223H and is the answer not in the manual?

Questions and answers

Subscribe to Our Youtube Channel

Summary of Contents for Cypress Semiconductor CY7C1223H

  • Page 1 Cypress Semiconductor Corporation Document #: 38-05674 Rev. *B Functional Description The CY7C1223H SRAM integrates 128K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK).
  • Page 2: Logic Block Diagram

    WRITE REGISTER BYTE WRITE REGISTER ENABLE REGISTER SLEEP CONTROL Document #: 38-05674 Rev. *B [1:0] BYTE WRITE DRIVER MEMORY ARRAY BYTE WRITE DRIVER PIPELINED ENABLE CY7C1223H OUTPUT OUTPUT SENSE BUFFERS REGISTERS AMPS INPUT REGISTERS Page 2 of 16 [+] Feedback...
  • Page 3: Pin Configurations

    Pin Configurations Document #: 38-05674 Rev. *B 100-pin TQFP Pinout Top View CY7C1223H CY7C1223H Page 3 of 16 [+] Feedback...
  • Page 4: Pin Descriptions

    CE to select/deselect the device. CE and CE to select/deselect the device. CE is deasserted HIGH. are placed in a tri-state condition. [A:B] CY7C1223H , CE , and CE are sampled active. and BWE). [A:B] is HIGH. CE is sampled...
  • Page 5: Functional Overview

    A synchronous self-timed write mechanism has been provided to simplify the Write operations. Because the CY7C1223H is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ inputs. Doing so will tri-state the output drivers. As a safety precaution, DQ are automatically tri-stated whenever a write cycle is detected, regardless of the state of OE.
  • Page 6: Truth Table

    Address Address A1, A0 A1, A0 ZZ ADSP ADSC , BW ) and BWE = L or GW = L. WRITE = H when all Byte write enable signals ( BW CY7C1223H Second Third Fourth Address Address A1, A0 A1, A0...
  • Page 7 ZZ inactive to exit sleep current RZZI Document #: 38-05674 Rev. *B Test Conditions − 0.2V ZZ > V − 0.2V ZZ > V ZZ < 0.2V This parameter is sampled This parameter is sampled CY7C1223H Min. Max. Unit Page 7 of 16 [+] Feedback...
  • Page 8: Maximum Ratings

    ≤ V or V , f = 0 /2), undershoot: V (AC)> –2V (Pulse width less than t (min.) within 200 ms. During this time V < V and V CY7C1223H +0.5V 3.3V −5%/+10% 2.5V−5% to Min. Max. Unit 3.135 3.135...
  • Page 9 OUTPUT 5 pF R = 351Ω INCLUDING JIG AND SCOPE R = 1667Ω 2.5V 5 pF R =1538Ω INCLUDING JIG AND SCOPE CY7C1223H 100 TQFP Max. Unit 100 TQFP Package Unit 30.32 °C/W 6.85 °C/W ALL INPUT PULSES ≤1 ns ≤...
  • Page 10: Switching Characteristics

    Set-up Before CLK Rise Hold After CLK Rise and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ = 2.5V. CY7C1223H 166 MHz 133 MHz Max. Min. Max. Unit minimum initially before a read or write operation...
  • Page 11: Switching Waveforms

    Q(A2 + 1) Q(A2 + 2) Q(A1) BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH, CE CY7C1223H Burst continued with new base address Deselect cycle t CHZ Q(A2 + 3) Q(A2) Q(A2 + 1)
  • Page 12 ADV suspends burst D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) BURST WRITE DON’T CARE UNDEFINED LOW. [A:B] CY7C1223H t ADS t ADH t WES t WEH t ADVS t ADVH D(A2 + 3) D(A3) D(A3 + 1)
  • Page 13 Document #: 38-05674 Rev. *B t WES t WEH t DS t DH t OELZ D(A3) t OEHZ Q(A4) Single WRITE BURST READ UNDEFINED DON’T CARE CY7C1223H D(A5) D(A6) Q(A4+1) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page 13 of 16 [+] Feedback...
  • Page 14 20. Device must be deselected when entering ZZ mode. See truth table for all possible signal conditions to deselect the device. 21. DQs are in High-Z when exiting ZZ sleep mode. Document #: 38-05674 Rev. *B t ZZREC t RZZI DESELECT or READ Only High-Z DON’T CARE CY7C1223H Page 14 of 16 [+] Feedback...
  • Page 15: Ordering Information

    Speed Package (MHz) Ordering Code Diagram CY7C1223H-166AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1223H-166AXI 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1223H-133AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1223H-133AXI 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free...
  • Page 16 Document History Page Document Title: CY7C1223H 2-Mbit (128K x 18) Pipelined DCD Sync SRAM Document Number: 38-05674 REV. ECN NO. Issue Date 347357 See ECN 424820 See ECN 459347 See ECN Document #: 38-05674 Rev. *B Orig. of Change Description of Change...

Table of Contents

Save PDF