Cypress Semiconductor CY7C1511V18 Specification Sheet

Features
■ Separate independent read and write data ports
❐
Supports concurrent transactions
■ 300 MHz clock for high bandwidth
■
4-word burst for reducing address bus frequency
■ Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 600 MHz) at 300 MHz
■ Two input clocks (K and K) for precise DDR timing
❐
SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Single multiplexed address input bus latches address inputs
for read and write ports
■ Separate port selects for depth expansion
■
Synchronous internally self-timed writes
■
Available in x8, x9, x18, and x36 configurations
■ Full data coherency, providing most current data
■ Core V = 1.8 (± 0.1V); IO V
DD
■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■
Variable drive HSTL output buffers
■
JTAG 1149.1 compatible test access port
■ Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1511V18 – 8M x 8
CY7C1526V18 – 8M x 9
CY7C1513V18 – 4M x 18
CY7C1515V18 – 2M x 36
Selection Guide
Description
Maximum Operating Frequency
Maximum Operating Current
Cypress Semiconductor Corporation
Document Number: 38-05363 Rev. *F
= 1.4V to V
DDQ DD
300 MHz 278 MHz
300
x8 930
x9 940
x18 1020
x36 1230
• 198 Champion Court
CY7C1511V18, CY7C1526V18
CY7C1513V18, CY7C1515V18
72-Mbit QDR™-II SRAM 4-Word

Functional Description

The CY7C1511V18, CY7C1526V18, CY7C1513V18, and
CY7C1515V18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR™-II architecture. QDR-II architecture
consists of two separate ports: the read port and the write port to
access the memory array. The read port has dedicated data
outputs to support read operations and the write port has
dedicated data inputs to support write operations. QDR-II archi-
tecture has separate data inputs and data outputs to completely
eliminate the need to "turn-around" the data bus that exists with
common IO devices. Each port can be accessed through a
common address bus. Addresses for read and write addresses
are latched on alternate rising edges of the input (K) clock.
Accesses to the QDR-II read and write ports are completely
independent of one another. To maximize data throughput, both
read and write ports are equipped with DDR interfaces. Each
address location is
(CY7C1511V18), 9-bit words (CY7C1526V18), 18-bit words
(CY7C1513V18), or 36-bit words (CY7C1515V18) that burst
sequentially into or out of the device. Because data can be trans-
ferred into and out of the device on every rising edge of both input
clocks (K and K and C and C), memory bandwidth is maximized
while simplifying system
"turn-arounds".
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
250 MHz
278 250
865 790
870 795
950 865
1140 1040
,
• San Jose CA 95134-1709
Burst Architecture
associated with four 8-bit
design by eliminating
200 MHz 167 MHz
200 167
655 570
660 575
715 615
850 725
• 408-943-2600
Revised August 06, 2008
words
bus
Unit
MHz
mA
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