Cypress Semiconductor CY7C1310AV18 Specification Sheet

18-Mb QDR™-II SRAM 2-Word Burst Architecture
Features
• Separate independent Read and Write data ports
— Supports concurrent transactions
• 167-MHz clock for high bandwidth
• 2-Word Burst on all accesses
• Double Data Rate (DDR) interfaces on both Read and
Write ports (data transferred at 333 MHz) @ 167MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two output clocks (C and C) account for clock skew
and flight time mismatching
• Echo clocks (CQ and CQ) simplify data capture in high
speed systems
• Single multiplexed address input bus latches address
inputs for both Read and Write ports
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• Available in x8, x18, and x36 configurations
• Full data coherancy , providing most current data
• Core Vdd=1.8V(+/-0.1V);I/O Vddq=1.4V to Vdd
• 13 x 15 x 1.4 mm 1.0-mm pitch FBGA package, 165 ball
(11x15 matrix)
• Variable drive HSTL output buffers
• JTAG 1149.1 compatible test access port
• Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1310AV18 – 2M x 8
CY7C1312AV18 – 1M x 18
CY7C1314AV18 – 512K x 36
Logic Block Diagram (CY7C1310AV18)
D
[7:0]
A
(19:0)
20
K
K
DOFF
V
REF
WPS
BWS
[1:0]
Cypress Semiconductor Corporation
Document #: 38-05497 Rev. *A
PRELIMINARY
8
Write
Reg
Address
Register
CLK
Gen.
Read Data Reg.
Control
Logic
• 3901 North First Street

Functional Description

The CY7C1310AV18/CY7C1312AV18/CY7C1314AV18 are
1.8V Synchronous Pipelined SRAMs, equipped with QDR-II
architecture. QDR-II architecture consists of two separate
ports to access the memory array. The Read port has
dedicated Data Outputs to support Read operations and the
Write Port has dedicated Data Inputs to support Write opera-
tions. QDR-II architecture has separate data inputs and data
outputs to completely eliminate the need to "turn-around" the
data bus required with common I/O devices. Access to each
port is accomplished through a common address bus. The
Read address is latched on the rising edge of the K clock and
the Write address is latched on the rising edge of the K clock.
Accesses to the QDR-II Read and Write ports are completely
independent of one another. In order to maximize data
throughput, both Read and Write ports are equipped with
Double Data Rate (DDR) interfaces. Each address location is
associated with two 8-bit words (CY7C1310AV18) or 18-bit
words (CY7C1312AV18) or 36-bit words (CY7C1314AV18)
that burst sequentially into or out of the device. Since data can
be transferred into and out of the device on every rising edge
of both input clocks (K and K and C and C), memory bandwidth
is maximized while simplifying system design by eliminating
bus "turn-arounds."
Depth expansion is accomplished with Port Selects for each
port. Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Write
Address
Reg
Register
Control
Logic
16
8
Reg.
Reg.
8
Reg.
,
• San Jose CA 95134
CY7C1310AV18
CY7C1312AV18
CY7C1314AV18
A
(19:0)
20
RPS
C
CQ
C
CQ
8
8
Q
[7:0]
8
• 408-943-2600
Revised June 1, 2004
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