Cypress Semiconductor CY7C1019BN Specification Sheet

Features
• High speed
— t = 12, 15 ns
AA
• CMOS for optimum speed/power
• Center power/ground pinout
• Automatic power-down when deselected
• Easy memory expansion with CE and OE options
• Functionally equivalent to CY7C1019
Logic Block Diagram
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
512 x 256 x 8
A
5
ARRAY
A
6
A
7
A
8
COLUMN
CE
DECODER
WE
OE
Cypress Semiconductor Corporation
Document #: 001-06425 Rev. **
Functional Description
The CY7C1019BN is a high-performance CMOS static RAM
organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and three-state drivers. This
device has an automatic power-down feature that significantly
reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1019BN is available in standard 32-pin TSOP Type
II and 400-mil-wide SOJ packages.
POWER
DOWN
• 198 Champion Court
128K x 8 Static RAM
through I/O ) is then written into the location
0 7
0
0
Pin Configurations
SOJ
Top View
A
1
0
A
1 2
A
3
2
A
4
3
I/O
0
CE 5
I/O
6
I/O
0
1
I/O
7
1
I/O
V
2
8
CC
V
9
SS
I/O
3
I/O
10
2
I/O
11
3
I/O
4
WE
12
A
4
13
I/O
5
A
5 14
A
I/O 15
6
6
A
16
7
I/O
7
,
• San Jose CA 95134-1709
CY7C1019BN
through A ).
16
through I/O ) are placed in a
7
/ TSOPII
A
32
16
31 A
15
30
A
14
A
29
13
28
OE
27
I/O
7
26
I/O
6
25
V
SS
24
V
CC
23
I/O
5
22
I/O
4
A
21
12
A
20 11
A
19
10
A
18
9
A
17
8
• 408-943-2600
Revised February 1, 2006
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