Cypress Semiconductor CY7C1006D Specification Sheet

Features
• Pin- and function-compatible with CY7C106B/CY7C1006B
• High speed
— t = 10 ns
AA
• Low active power
— I = 80 mA @ 10 ns
CC
• Low CMOS standby power
— I = 3.0 mA
SB2
• 2.0V Data Retention
• Automatic power-down when deselected
• CMOS for optimum speed/power
• TTL-compatible inputs and outputs
• CY7C106D available in Pb-free 28-pin 400-Mil wide Molded
SOJ package. CY7C1006D available in Pb-free 28-pin
300-Mil wide Molded SOJ package
Logic Block Diagram
CE
WE
OE
Note
1. For guidelines on SRAM system design, please refer to the 'System Design Guidelines' Cypress application note, available on the internet at www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05459 Rev. *E
INPUT BUFFER
A 1
A 2
A 3
256K x 4
A 4
A 5
A 6 ARRAY
A 7
A 8
A 9
COLUMN DECODER
• 198 Champion Court
1-Mbit (256K x 4) Static RAM
Functional Description
The CY7C106D and CY7C1006D are high-performance
CMOS static RAMs organized as 262,144 words by 4 bits.
Easy memory expansion is provided by an active LOW Chip
Enable (CE), an active LOW Output Enable (OE), and tri-state
drivers. These devices have an automatic power-down feature
that reduces power consumption by more than 65% when the
devices are deselected. The four input and output pins (IO
through IO ) are placed in a high-impedance state when:
3
• Deselected (CE HIGH)
• Outputs are disabled (OE HIGH)
• When the write operation is active (CE and WE LOW)
Write to the device by taking Chip Enable (CE) and Write
Enable (WE) inputs LOW. Data on the four IO pins (IO
through IO ) is then written into the location specified on the
3
address pins (A through A
0 17
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH.
Under these conditions, the contents of the memory location
specified by the address pins appears on the four IO pins.
POWER
DOWN
,
• San Jose CA 95134-1709
CY7C106D
CY7C1006D
[1]
).
IO 0
IO 1
IO 2
IO 3
• 408-943-2600
Revised February 22, 2007
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