Yaesu VX-7R Operating Manual page 101

Transmitter
RF Power Output: 5.0 W (@7.4 V & 13.8 V EXT DC IN)
Modulation Type: F2, F3: Variable Reactance (MAIN & SUB)
Maximum Deviation: ±5 kHz F2/F3
Spurious Emission: At least 60 dB down (@ Tx HI/L3)
Microphone Impedance: 2K Ohms
Receiver
Circuit Type: N-FM, AM: Double-Conversion Superheterodyne
Sensitivity: MAIN Rx:
Selectivity: 12 kHz/25 kHz (–6dB/–60dB: N-FM, AM)
AF Output: 200 mW @ 8 Ohms for 10 % THD (@ 7.4 V DC)
Specifications are subject to change without notice, and are guaranteed within the 50/144/222/
430 MHz amateur bands only.
VX-7R O
PERATING
0.3W (@7.4 V & 13.8 V EXT DC IN, 222 MHz
1.0W (@7.4 V & 13.8 V EXT DC IN, 50 MHz AM)
A3: Low Level Amplitude Modulation (MAIN, 50 MHz)
At least 50 dB down (@ Tx L2/L1)
W-FM: Triple-Conversion Superheterodyne
IF: MAIN Rx
1st: 47.25 MHz (N-FM, AM), 45.8 MHz (W-FM)
2nd: 450 kHz (N-FM, AM), 10.7 MHz (W-FM)
3rd: 1 MHz (W-FM)
SUB Rx
1st: 46.35 MHz
2nd: 450 kHz
3.0 µV for 10 dB S/N (0.5-30 MHz, AM)
0.5 µV (TYP) for 12 dB SINAD (30-50, N-FM)
0.16 µV for 12 dB SINAD (50-54, N-FM)
1.0 µV (TYP) for 12 dB SINAD (57-76, N-FM)
1.0 µV (TYP) for 12 dB SINAD (76-108, W-FM)
1.5 µV (TYP) for 10 dB SN (108-137, AM)
0.2 µV for 12 dB SINAD (137-140, N-FM)
0.16 µV for 12 dB SINAD (140-150, N-FM)
0.2 µV for 12 dB SINAD (150-174, N-FM)
0.3 µV for 12 dB SINAD (174-225, N-FM)
0.5 µV for 12 dB SINAD (300-350, N-FM)
0.2 µV for 12 dB SINAD (350-400, N-FM)
0.18 µV for 12 dB SINAD (400-470, N-FM)
0.35 µV for 12 dB SINAD (470-540, W-FM)
3.0 µV (TYP) for 12 dB SINAD (540-800, W-FM)
1.0 µV (TYP) for 12 dB SINAD (800-999, N-FM) (Cellular Blocked)
SUB Rx:
0.18 µV for 12 dB SINAD (50-54, N-FM)
0.18 µV for 12 dB SINAD (137-174, N-FM)
0.2 µV for 12 dB SINAD (420-470, N-FM)
200 kHz/300 kHz (–6dB/–20dB: W-FM)
400 mW @ 8 Ohms for 10 % THD (@ 13.8 V DC)
M
ANUAL
S
PECIFICATIONS
99