XVME-100 Manual
March, 1987
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1.4 S P E C I F I C AT I O N S
Table 1-1 lists the XVME-100 Memory Module's characteristics and specifications.
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Table 1-1. M e m o r y Module Specifications
Characteristic
Maximum Mcmory Capacity:
EPROM
1
RAM
1
Mask Programmable ROM - -
EEPROM2
Device Sizes Supported:
EPROM
R
A
M
Dcvicc Speeds Supported
Power Requirements
Battery Rating
Battery L i f e
VMEbus COMPLIANCE
Complies w i t h VMEbus Specifications, Revision C.1
• A 2 4 : D 1 6 / D 0 8 ( E O ) DTB Slave
•
4
B U S G R A N T I N s are connected t o t h e i r respective BUS G R A N T
OUTs
• I A C K I N is connected to I A C K O U T
• S I N G L E - 3U Form Factor
Specification
2 banks o f 4 sites
M
M
1 M
5
6
K
8K by 8 up to 128K b y 8
8K b y 8 up to 128K by 8
M
a
s
k
8K by 8 up to 128K by 8
8K by 8 up to 32K b y 8
(EEPROM m u s t h a v e q u i c k
write/polling technique
and must employ T T L logic
levels.)
—
— — — —100ns, 150ns, 200ns, & 250ns
+5V @ 900mA typ., I A max.
1.4Amp hours
6 y e a r s t y p . ( u s i n g a n 8-6264
Hitachi R A M o r e q u i v a l e n t
device)
1-3
byte
byte
byte
bytes
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