Register Map - Infineon TLE4997 User Manual

Configuration and calibration of linear hall sensor
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Table 3-5
Electrical and Timing Specification of the Programming Pulse and Margin Voltage (cont'd)
Parameter
OUT program slope
1)
(rise)
OUT program slope
1)
(fall)
OUT write time
OUT erase time
1) faster slope may lead to permanent damage of the EEPROM.
3.4

Register Map

Table 3-6
shows the internal registers of the TLE4997 (compare also
Table 3-6
TLE4997 Register Map
Address
Symbol
05
HCAL
H
06
TCAL
H
07
VDAC
H
0A
HADC
H
0B
TADC
H
0F
STATUS
H
10
...19
EEPROM
H
H
20
DAC_SET
H
21
TEST
H
Note: To access the registers (except STATUS, HADC, TADC, VADC, DAC_SET and TEST), the digital signal
processing unit (DSPU) has to be disabled first via the TEST register.
HCAL
This register contains the temperature compensated magnetic measurement as a 16bit signed value. This value
is in the range of +/- 30000.
TCAL
This register contains a 16 bit signed value and delivers the current junction temperature of the device. The
junction temperature in °C is calculated from the register value by: T
VDAC
This register contains a 12 bit unsigned decimal result applied to the internal DAC for the ratiometric output stage.
The value range is from 0 to 4095 and corresponds to 0% to 100% of V
HADC
This register contains a 16bit signed value that corresponds to the raw Hall cell measurement value. This value is
in the range of +/- 20000.
User's Manual
Symbol
Min.
Typ.
V
/t
O,PROG
V
/t
-10
O,PROG
t
9.9
10.0
PROG,WR
t
79.2
80.0
PROG,ER
Function
Calibrated Hall value
Calibrated temperature value, including reference temperature T
Calculated DAC value, incl. clampling
Uncalibrated Hall ADC value
Uncalibrated temperature ADC value
Status register
EEPROM registers (see
Direct setup of DAC value
Test mode register
Values
Unit
Max.
2
V/µs
V/µs
10.1
ms
80.8
ms
Figure
Chapter
3.5)
= (TCAL/16+48) [°C].
J
.
DD
11
User's Manual
TLE4997 Programming
Note / Test Condition
time to reach V
shall not
O,PROG
exceed 50 µs
time to reach 1v max. shall not
exceed 50 µs
2-1).
0
v01_01, 2019-08
TLE4997
R/W
read only
read only
read only
read only
read only
read only
read/write
read/write
read/write

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