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In order to permanently store a programmed parameter set to the EEPROM, the "EEPROM erase" and "EEPROM
write" commands shall be sent, followed by a programming pulse.
pulse.
VDD
t
H LD
Vout
MSB
erase or write
command frame
(buffer stays off)
Figure 3-9 Programming Pulse Timing
After programming, a margin check is necessary to test the stability of the programmed data. The margin check
is initiated by an "EEPROM margin check" command followed by a margin voltage.
Figure 3-10 Margin Check Timing
The margin voltage is varied during subsequent steps within the threshold margin level range. A too low margin
voltage value indicates a too short programming pulse duration or a too low programming voltage. A too high
margin voltage value indicates a too long programming pulse duration or a too high programming voltage.
Table 3-5
gives the electrical and timing specifications of the programming pulse and the margin voltage check
procedure.
Table 3-5
Electrical and Timing Specification of the Programming Pulse and Margin Voltage
Parameter
OUT data input current
OUT margin level
Threshold margin level
Margin setup time
V
slope for margin
DD
OUT program level
User's Manual
t
M IN
V
/t
O ,PR OG
(rise)
VDD
Vout
t
hld
MSB
margin
command frame
(buffer stays off)
Symbol
Min.
I
0
O
V
-0.1
O,MARG
V
2.23
TH
t
200
MARG
V
/t
5
DD
V
19.2
O,PROG
Figure 3-9
t
or t
PR OG,W R
PR OG,ER
V
pulse
prog
V
/t
dd
(fall)
t
t
min
MARG
t
apply V
and
O ,MARG
capture EEPROM data
Values
Typ.
Max.
–
20
–
7
–
4.5
0.4
–
–
10
150
19.3
19.4
10
TLE4997 Programming
shows the timing of the programming
t
M IN
t
V
/t
O,PR OG
next command
(fall)
min
LSB
next command
frame
Unit
Note / Test Condition
mA
during application of
programming pulse or margin
voltage
V
V
check "1"
V
check "0"
µs
V/µs
V
TLE4997
User's Manual
H LD
LSB
frame
v01_01, 2019-08
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