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3.6.1
Setting the TEST register
The following steps are used to set the TEST register:
1. Send a write command (TEST register set: Command 09
2. Send a new data word for the register.
3.6.2
Readout of the EEPROM Content
The following steps are used to readout the EEPROM and store the content in an array:
1. Send a block read command (EEPROM data readout: Command 03
2. Read the first 8 data words of the EEPROM and store it in an array.
3. Send a read command (EEPROM data readout: Command 01
4. Read the 9th data word of the EEPROM and store it in an array.
5. Send a read command (EEPROM data readout: Command 01
6. Read the 10th data word of the EEPROM and store it in an array.
3.6.3
Setting the EEPROM Content
The following steps are used to set the EEPROM content with data from an array:
1. Send a block write command (EEPROM data write: Command 0B
2. Send the first 8 data words from the array to the EEPROM.
3. Send a write command (EEPROM data write: Command 09
4. Send the 9th data word from the array to the EEPROM.
5. Send a write command (EEPROM data write: Command 09
6. Send the 10th data word from the array to the EEPROM
3.6.4
Calculation of Bits to Erase
The EEP_PROG array for the erase procedure is calculated from the old EEPROM content EEP_OLD and the
new EEPROM content EEP_NEW in the following way:
For each data word i: EEP_PROG[i] = INVERT ((EEP_OLD[i] XOR EEP_NEW[i]) AND EEP_OLD[i])
Table 3-7
shows an example of a calculated erase mask.
Table 3-7
Erase Array Example
EEP_OLD
0101010101010101
EEP_NEW
0101110001010101
EEP_PROG
1111111011111111
3.6.5
Calculation of Bits to Write
The EEP_PROG array for the write procedure is calculated from the old EEPROM content EEP_OLD and the new
EEPROM content EEP_NEW in the following way:
For each data word i: EEP_PROG[i] = (EEP_OLD[i] XOR EEP_NEW[i]) AND EEP_NEW[i]
Table 3-7
shows an example of a calculated erase mask.
Table 3-8
Write Array Example
EEP_OLD
0101010101010101
EEP_NEW
0101110001010101
EEP_PROG
0000100000000000
User's Manual
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User's Manual
TLE4997 Programming
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