HP 5340A Operating And Service Manual page 128

Model 5340A
Replaceable Parts
= diode transistor logic
= digital voltmeter
DVM
emitter coupled logic
=
EMF
=
proresuing
= electrolytic
=
external
F = farad
FET = field-effect tran.
flip-flop
F/F =
FH flat head
=
= frequency modula-
FM
tion
FP front panel
=
FREQ = frequency
D
F X =
= gram
= germanium
GH7
=
=
H =henry
h = hour
HET =heterodyne
HEX =hexagonal
HD =head
HDW
=hardware
H F =high frequency
HQ =
=high
HP =
H P F
HK hour (wed in parts
list)
HV =high voltage
= Hertz
H7
integrated circuit
IT) = inuide diameter
I F = intermediate fre-
TMPG = impregnated
= inch
in
INC D =
= input
INS =
INT internal
=
= kilogram
kH7
= kilohm
=kilovolt
=
rapacitance
light-emitting diode
L F = low frequency
long
= left hand
limit
=
= linear taper (used in
parta list)
linear
WASH =
= low: local oucillator
LOG = logarithmir taper
in parts list)
low pauti filter
low voltage
=
= meter (distance)
m
milliampere
=
MAX maximum
megohm
=
MEG
meg (used in
=
parts list)
MET F1.M
= metal film
MET OX metal oxide
MF medium frequency;
mirrofarad (used in
6-2
ABBREVIATIONS
MFR = manufacturer
milligram
megahertz
millihenry
mho = mho
MIN
= minimum
min minute (time)
minute (plane angle)
mm millimeter
=
MOD modulator
MOM momentary
=
MOS
mu = millisecond
MTG mounting
MTR = meter (indicating
device)
millivolt
millivolt, ac
= millivolt, dc
= millivolt, peak
millivolt, peak-*
=
P - P
peak
millivolt, rms
milliwatt
multiplex
MY
= mylar
microfarad
mirrohenry
pmho mirromhn
mirrnsemnd
microvolt
mirrovolt, a c
mirrovolt, dc
= micrnvolt, peak
mirrovolt, peak-to-
peak
= micrnvolt, rms
= microwatt
= nanoampere
NC connection
normally closed
=
NE neon
NEG negative
nanofarad
= nickel plate
normally open
NOM nominal
NORM
normal
NPN negative-positive
negative
NPO
= negative-positive
ture coefficient)
NRFR
not recommended
for field replacement
NSR not ueparately
nanouecond
nanowatt
OBD
order hy description
OD
outside diameter
OH oval head
O P AMPL operational amplifier
OPT
option
oucillator
OX oxide
ounce
ohm
P peak (used in parts
PAM pulseamplitude
modulation
PC
printed circuit
modulation
PDM
modulation
pirofarad
PHI,
PIN
negative
= peak inverse voltage
= peak
= phase lock
PM
P N P pouitivenegative
pouitive
= part of
polystyrene
PORC
pouitive; position(s)
POSN
POT = potentiometer
=
P-P peak-*peak
PP
(used
in parts list)
PPM =
modulation
PREAMPI.
= preamplifier
P R F
= pulse-repetition
PRR = pulse repetition rate
picosecond
=
=
tinn
=
PWM pulse-width
modulation
=
capacitance
rectifier
R E F = reference
REG
regulated
RF = radio frequency
RFI
= radio frequency
interference
RH round head; right
hand
inductance
capacitance
RMO
rack mount only
= root-mean-square
RND = round
ROM read-only memory
= rack and panel
RWV
voltage
=
(used in parta list)
SCR silicon controlled
rectifier; screw
=
SECT
SHF
fre-
quency
= silicon
S L slide
SNR
SPDT
=
ring
SPST singlepole. single-
throw
SSB single sidehand
SST
stainless steel
STL
square
SWR ntanding-wave ratio
synchronize
T timed (slow-blow
fuse)
TA tantalum
=
=temperature
rompensating
TD
= time delay
TERM =terminal
= thin-film transistor
= toggle
=thread
THRU =through
= titanium
tolerance
trimmer
TSTR
logir
=
TV television
television interference
traveling wave tube
U = micro (used
in parts list)
=
microfarad (used in
IJHF ultrahigh frequency
IJNREG
unregulated
V
= volt
VA = voltampere
Var ac
VAR =
=
oucillatnr
Vdc = voltn, dc
VDCW
(used in parts list)
voltn, filtered
VFO = variahle-frequency
oscillator
=
V H F very-high frequency
= voltn, peak
= volts, rms
VSWR voltage standing
wave ratio
VTO
voltage-tuned
=
vacuum-tuhe
voltmeter
= voltn, uwitched
W = w a t t
= with
=
working inverse
voltage
ww
wirewound
without
YIG
yttrium-iron-garnet
characteristic
impedance
NOTE
All abbreviationu in the parts
list will be in upper case.
Abbreviation Prellx Multiple
T tera
G
M
mega
k kiln
da deka 10
d deci
m
micro
nann
P
f
a