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Infineon XENSIV BGT60LTR11SAIP EBG shield Manual
Infineon XENSIV BGT60LTR11SAIP EBG shield Manual

Infineon XENSIV BGT60LTR11SAIP EBG shield Manual

60 ghz radar system platform

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UG141448
BGT60LTR11SAIP EBG shield
XENSIV™ 60 GHz radar system platform
Board version V3.1
About this document
Scope and purpose
This user guide describes the function, circuitry, and performance of the XENSIV™ BGT60LTRS11AIP 60 GHz
radar electromagnetic band gap (EBG) shield. The shield provides the supporting circuitry to the onboard
BGT60LTR11SAIP
monolithic microwave-integrated circuit (MMIC), Infineon's 60 GHz radar chipset with
antenna-in-package (AIP). An EBG structure is added to reduce the impact of neighboring components,
resulting in a homogeneous field of view (FoV). This makes BGT60LTR11SAIP the appropriate choice for ceiling-
mounted applications. In addition to the autonomous mode configuration, the shield offers a digital interface
for configuration and transfer of the acquired radar data to a microcontroller board such as Radar Baseboard
MCU7.
Note:
The BGT60LTR11SAIP is a down-specified version of our
operating temperature range is reduced from -20 to +85°C towards -10 to +70°C.
Intended audience
The intended audiences for this document are design engineers, technicians, and developers of electronic
systems, working with Infineon's XENSIV™ 60 GHz radar sensors.
Reference Board/Kit
Product(s) embedded on a PCB with a focus on specific applications and defined use cases that may include
software. PCB and auxiliary circuits are optimized for the requirements of the target application.
Note:
Boards do not necessarily meet safety, EMI, quality standards (for example UL, CE) requirements.
User guide
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
BGT60LTR11AIP
radar sensor. The
Revision 1.00
2024-11-21

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Summary of Contents for Infineon XENSIV BGT60LTR11SAIP EBG shield

  • Page 1 (EBG) shield. The shield provides the supporting circuitry to the onboard BGT60LTR11SAIP monolithic microwave-integrated circuit (MMIC), Infineon’s 60 GHz radar chipset with antenna-in-package (AIP). An EBG structure is added to reduce the impact of neighboring components, resulting in a homogeneous field of view (FoV).
  • Page 2 Infineon Technologies. The design of the Evaluation Boards and Reference Boards has been tested by Infineon Technologies only as described in this document. The design is not qualified in terms of safety requirements, manufacturing and operation over the entire operating temperature range or lifetime.
  • Page 3 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Safety precautions Safety precautions Note: Please note the following warnings regarding the hazards associated with development systems. Table 1 Safety precautions Caution: The reference board contains parts and assemblies sensitive to electrostatic discharge (ESD).
  • Page 4 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Table of contents Table of contents About this document ........................1 Important notice ..........................2 Safety precautions .......................... 3 Table of contents ..........................4 Introduction .......................... 5 Radar system platform ..........................5 Key features .............................
  • Page 5 The BGT60LTR11SAIP electromagnetic band gap (EBG) shield demonstrates the features of the BGT60LTR11SAIP MMIC and gives you a “plug-and-play” radar solution. The shield can also be attached to an Arduino MKR board or an Infineon Radar Baseboard MCU7. A graphical user interface (GUI) is available via the Infineon Developer Center to display and analyze the acquired data in the time and frequency domains.
  • Page 6 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Introduction BGT60LTR11SAIP Demo BGT60LTR11SAIP MMIC BGT60LTR11SAIP EBG shield = Radar Baseboard MCU7 + BGT60LTR11SAIP EBG shield 20.20 mm Figure 1 BGT60LTR11SAIP EBG shield using BGT60LTR11SAIP MMIC Key features The BGT60LTR11SAIP EBG shield is optimized for fast prototyping design and system integration, as well as initial product feature evaluation.
  • Page 7 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform System specifications System specifications Table 3 BGT60LTR11SAIP EBG shield specifications Parameter Unit Min. Typ. Max. Comments System performance Detection range – Typical motion detection range for human target at low threshold (in both E-plane and H-plane orientations) Power supply...
  • Page 8 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Hardware description Hardware description Overview The BGT60LTR11SAIP EBG shield is a very small PCB of 20.2 mm x 19.15 mm size, with a XENSIV™ BGT60LTR11SAIP 60 GHz radar sensor mounted on top of the PCB. The PCB can be manufactured using a standard FR4 laminate, as the antennas are integrated into the chip package.
  • Page 9 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Hardware description 1.5V_RF 1.8 V or 3.3 V 1.5V_PLL 3.3 V Castellated Holes 1.5V_RF PDet LED2 1.5V_RF TDet LED1 38.4 MHz EEPROM quartz Figure 4 BGT60LTR11SAIP EBG shield block diagram The block diagram in Figure 4 shows the configuration of the shield.
  • Page 10 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Hardware description A low-pass filter (LPF) • The integrated target detector circuits in the MMIC indicate the detection of movement in front of the radar and the direction of movement with two digital signals (BGT_TARGET_DET and BGT_PHASE_DET). See Section for more details.
  • Page 11 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Hardware description Figure 7 Top, side, and bottom views of the BGT60LTR11SAIP MMIC package Sensor power supply Because radar sensors are very sensitive to supply voltage fluctuations or crosstalk between different supply domains, a low-noise power supply and properly decoupled supply rails are critical.
  • Page 12 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Hardware description Crystal The MMIC requires an oscillator source with a stable reference clock providing low phase jitter and low phase noise; the oscillator is integrated inside the MMIC. This reduces the current consumption because crystal oscillators consume only a few milliamperes (mA) and run continuously.
  • Page 13 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Hardware description The charging time of the hold capacitor ( is limited to the selected PW. Shorter PWs require smaller �� �� ℎ������ ℎ������ to become ~90% percent charged during one pulse. The rise time is controlled by the itself and the ��...
  • Page 14 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Hardware description Connectors The BGT60LTR11SAIP EBG shield can be connected to an MCU board like Radar Baseboard MCU7 with the P1 and P2 connectors. Castellated holes (P3 and P4) are visible on the top and bottom sides of the PCB. TD and PD pins of the castellated holes correspond to the internal detector outputs of the MMIC.
  • Page 15 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Hardware description 3V3digital1 I2C_SCL I2C_SDA 24CW1280T-I/CS0668 3V3digital1 Figure 13 Schematics of the EEPROM LEDs and level shifters The shield has two LEDs to indicate the motion detection (green) and the target’s direction of motion (red); see Figure 14.
  • Page 16 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Hardware description MMIC quad-state inputs The BGT60LTR11SAIP MMIC has four quad-state inputs QS1 to 4, used in autonomous mode to set the device configuration. Figure 15 shows the default settings of these QS pins on the BGT60LTR11SAIP EBG shield. To offer more flexibility in autonomous mode, an “Advance mode”...
  • Page 17 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Hardware description The EBG structure has two important effects; both effects result in fewer deviations of the initial radiation pattern by the PCB. Reflections of an electromagnetic wave traveling perpendicular to the surface of the EBG structure behave •...
  • Page 18 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Hardware description 3.11 Layer stackup and routing The PCB is designed with a four-layer stackup with standard FR4 material. Figure 17 shows the different layers and their thicknesses. Figure 17 PCB layer stackup in 2D and 3D views In the routing on the PCB, the VTUNE pin on the BGT60LTR11SAIP MMIC should be left floating.
  • Page 19 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Radar MMIC configuration Radar MMIC configuration The radar MMIC can be configured in two different operation modes. In autonomous mode, the sensor configuration parameters are set via QS pins and external resistors. In SPI mode, the connection to a microcontroller allows setting the sensor configuration parameters by writing in the internal registers through SPI.
  • Page 20 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Radar MMIC configuration By default, the BGT60LTR11SAIP EBG shield is configured in SPI mode to enable radar MMIC configuration via the FW running on the Radar Baseboard MCU7 microcontroller. To make the shield work in autonomous mode, you need to remove resistor R3, as shown in Figure Remove R3 for autonomous mode...
  • Page 21 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Radar MMIC configuration Detector threshold The internal detector threshold is the minimum signal strength that must be reached to trigger a detection event. The lower the threshold set, the higher the sensitivity and therefore the higher the detection range. Note: To avoid triggering a false detection, increase the detector threshold, which reduces the sensor sensitivity, especially in “noisy”...
  • Page 22 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Radar MMIC configuration Detector hold time The internal detector hold time is the time for which the internal detector outputs remain active after target detection. Autonomous mode QS3 is used to select the detector hold time value for autonomous mode. To have up to 16 hold time values, set “Advance mode”, as explained in 4.2.
  • Page 23 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Radar MMIC configuration Operating frequency Autonomous mode QS4 is used to set the operating frequency for the MMIC in the 60 GHz ISM band, which is important to meet worldwide regulation requirements. See Table 9 for possible settings.
  • Page 24 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Radar MMIC configuration Pulse repetition time (PRT) PRT is the duty cycle repetition rate, which means the time until the next pulsing sequence starts in pulsed mode. Autonomous mode The PRT can be configured in autonomous pulsed mode (QS1 is either GND or OPEN, as shown in Table 6) only if “Advance mode”...
  • Page 25 Figure Shield castellated holes Arduino pins Figure 22 Radar shield mounted on an Arduino MKR Wifi1010 board Find the BGT60LTR11 Radar Arduino Library and instructions to get started on Infineon’s GitHub repository. User guide Revision 1.00 2024-11-21...
  • Page 26 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Firmware Firmware Overview Radar Baseboard MCU7 comes with a default FW that serves as a bridge between a host (typically a PC) and the BGT60LTR11SAIP RF shield mounted on sensor connectors. When the FW detects a BGT60LTR11SAIP EBG shield, it automatically configures the driver layer for the BGT60LTR11SAIP sensor.
  • Page 27 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Firmware Activate falling-edge IRQ. 2. After the falling edge on the MISO line: Deactivate the falling-edge IRQ. MCU SPI communication allowed. Start the readout of internal ADC registers (Reg40 and Reg41) if required. Perform other SPI register access operations.
  • Page 28 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Firmware Start Hard-Reset or Soft-Reset Wait 1.5 msec Access SPI registers during runtime? Setup registers Guard Timer Activate miso_drv (Reg15[6]) Activate Pulse or CW mode expires Setup registers Guard timer expired Activate Pulse or CW mode Block access to SPI Enable IRQ for raising edge...
  • Page 29 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Firmware Note the following: MISO line is High-Z if Chip Select (CS) is inactive (default). • MISO arbitration can be enabled via the miso_drv (Reg15[6]) bit. • Without respecting MISO arbitration, device functionality is NOT ensured. •...
  • Page 30 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Measurement results Measurement results Radiation pattern simulation results To analyze the sensor radiation characteristics, the radiation pattern of a BGT60LTR11SAIP EBG shield configured in CW mode is simulated along the H-plane and E-plane of the sensor. Figure 26a shows the realized gain of the transmitting antenna in H-plane and E-plane at a frequency of 61 GHz.
  • Page 31 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Measurement results Motion detection area The measurements are conducted for different MMIC operation modes and settings. Figure 28 shows the possible operating modes, and how the detection status is driven. Sample QS pins Autonomous mode SPI mode inputs...
  • Page 32 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Measurement results H-plane E-plane Figure 29 H-plane and E-plane human target detection area for BGT60LTR11SAIP autonomous shield 7.2.2 SPI mode and MMIC internal detector Hardware • Radar Baseboard MCU7 and BGT60LTR11SAIP EBG shield (by default, configured in SPI pulsed mode). Firmware •...
  • Page 33 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Measurement results Figure 31 E-plane human target detection area, in SPI mode, using MMIC internal detector 7.2.3 SPI mode and motion detection algorithm Hardware • Radar Baseboard MCU7 and BGT60LTR11SAIP EBG shield (by default, configured in SPI pulsed mode). Firmware •...
  • Page 34 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Measurement results H-plane E-plane Figure 32 H-plan and E-plane human target detection area, in SPI mode, using advanced motion sensing (AMS) algorithm 7.2.4 On-ceiling measurements Hardware • Radar Baseboard MCU7 and BGT60LTR11SAIP EBG shield (by default, configured in SPI pulsed mode). Firmware •...
  • Page 35 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Measurement results 0° 270° AMS (Thres. = 15) 90° Internal detectors (Thres. = 80) 180° Figure 33 On-ceiling measurement results in SPI mode using the radar internal detectors (in red) and the AMS algorithm (in blue) User guide Revision 1.00...
  • Page 36 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Power consumption analysis Power consumption analysis Duty cycling The current consumption of the BGT60LTR11SAIP MMIC can be optimized by configuring the duty cycle pulse width (PW) and pulse repetition time (PRT). Table 11 lists the current consumption values of the MMIC with the default PW of 5 µs (the time MMIC is active during one pulsing event).
  • Page 37 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Power consumption analysis Adaptive pulse repetition time (APRT) APRT is a power-saving option of the BGT60LTR11SAIP MMIC. It consists of multiplying the PRT by a factor of 2, 4, 8, or 16 when no target is detected by the internal detector. When a target is detected, the PRT returns to the default value to ensure reliable detection.
  • Page 38 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Power consumption analysis Figure 37 APRT enabled: Multiplier x16, no target detected; PRT switches to 8 ms Figure 38 APRT enabled: Multiplier x16, target detected; PRT switches back from 8 ms to 500 µs User guide Revision 1.00 2024-11-21...
  • Page 39 Infineon Technologies AG: UG124434: User guide to BGT60LTR11(S)AIP; Available online Infineon Technologies AG: UG091519: Radar Baseboard MCU7 user guide; Available online Infineon Technologies AG: AN155336: Electronic band gap (EBG) structure for BGT60LTR11AIP application note; Available online User guide Revision 1.00...
  • Page 40 BGT60LTR11SAIP EBG shield XENSIV™ 60 GHz radar system platform Revision history Revision history Document Date Description of changes revision 1.00 2024-11-21 Initial version User guide Revision 1.00 2024-11-21...
  • Page 41 Technologies in a written document signed by 81726 Munich, Germany authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any © 2024 Infineon Technologies AG. consequences of the use thereof can reasonably be expected to result in personal injury.