Appendix; Technical Data - THORLABS APD110 Series Operation Manual

APD110x/120x

5 Appendix

5.1 Technical Data

Parameter
Detector Material/Type
Wavelength Range
Maximum APD Responsivity
Detector Active Area Diameter
Transimpedance Gain
Maximum Conversion Gain
OUTPUT Bandwidth (3 dB)
CW Saturation Power
Maximum Input Power
(Photodiode Damage
Threshold)
Minimum NEP (DC - 50 MHz)
Integrated Noise (DC - 50
MHz)
Electrical Output, Impedance
Maximum Output Voltage
DC-Offset Electrical Output
Power Supply
General
Operating Temperature Range
1 )
Storage Temperature Range
Dimensions (W x H x D)
Weight
1 ) Non-condensing
All technical data are valid at (23 ± 1) °C and (45 ± 15) % rel. humidity (non condensing)
12
APD110C
InGaAs APD
900 to 1700 nm
9 A/W
@ 1500 m, M = 10
0.2 mm
100 kV/A
50 kV/A with 50 W ter-
mination
0.9 x 10 6 V/W
DC to 50 MHz
4.2 µW
1 mW
3.3 nW (RMS)
±12 V, 250 mA (100 V,120 V,230 V switchable)
APD120A
Silicon APD
400 to 1000 nm
25 A/W
@ 800 nm, M = 50
1 mm
100 kV/A
50 kV/A with 50 W ter-
mination
2.5 x 10 6 V/W
DC to 50 MHz
1.5 µW
1 mW
1.4 nW (RMS)
BNC, 50 W
3.6 V (High Z load)
1.8 V (50 W)
< ±15 mV
0 - 40 °C
-40 to 70 °C
2 x 2.5 x 1"
< 0.1 kg
APD120A2
UV-enhanced Silicon
APD
200 to 1000 nm
25 A/W
@ 600 nm, M = 50
1 mm
100 kV/A
50 kV/A with 50 W ter-
mination
2.5 x 10 6 V/W
DC to 50 MHz
1.5 µW
1 mW
1.5 nW (RMS)
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