Appendix; Technical Data - THORLABS APD440A Operation Manual

5 Appendix

5.1 Technical Data

Parameter
Detector Material/Type
Wavelength Range
Typical Maximum APD Responsivity
Detector Active Area Diameter
M Factor Adjustment Range
M Factor Temperature Stability
Transimpedance Gain
Maximum Conversion Gain
Output Bandwidth (3 dB)
CW Saturation Power
Maximum Input Power
(Photodiode Damage Threshold)
4
Minimum NEP
Integrated Noise (RMS)
Electrical Output, Impedance
Maximum Output Voltage
DC-Offset Electrical Output
Power Supply
General
Operating Temperature Range
Storage Temperature Range
Dimensions (W x H x D)
Weight
1)
Ambient temperature within (23 ± 5)°C.
2)
Conversion Gain at the Peak Responsivity Wavelength. The Conversion Gain is a product of the Transimpedance
Gain and the Responsivity for a given M factor and wavelength.
3)
At Maximum Gain Setting.
4)
For more information on how NEP is calculated, please see Thorlabs'
5)
Non-condensing
© 2020 Thorlabs
53 A/W @ 800 nm (M = 100)
1
2
3
1.54 nW @ 800 nm, M=100
15.4 nW @ 800 nm, M=10
3.5 fW/ÖHz (DC - 100 kHz)
3
5
APD440A
Silicon APD
400 to 1000 nm
10 - 100 (Continuous)
± 2% (Typical); ± 3% (Max)
25 MV/A (50 Ω Termination)
50 MV/A (High-Z Termination)
9
2.65 x 10 V/W
DC to 100kHz
1.1 pW (DC - 100 kHz)
BNC, 50 W
4.1 V (High-Z load)
2.0 V (50 W)
±12 V, 250 mA (100 V, 120 V, 230 V switchable)
-40 to 70 °C
2.21" x 2.93" x 1.08"
(56.1 mm x 74.5 mm x 27.4 mm)
Noise Equivalent Power White
APD440A2
UV Enhanced Silicon APD
200 to 1000 nm
25 A/W @ 600 nm (M = 50)
1.0 mm
5 - 50 (Continuous)
1.25 x 10
3.28 nW @ 600 nm, M=50
32.8 nW @ 600 nm, M=5
1 mW
2.5 fW/ÖHz (DC - 100kHz)
0.8 pW (DC - 100 kHz)
< ±3 mV
0 to 40 °C
0.12 kg
5 Appendix
9
V/W
Paper.
9